terminology.md

Public field terminology

Collected: 2026-05-15; field contract updated: 2026-09-12.

This document defines canonical field keys shared across vendors. Results use device for identity, subtitle for a display summary, and blocks[].fields[] for details. Each field has stable key/value/unit/display semantics. Language packs supply labels, display text, block titles, and warnings without changing keys. PN means part number; die means an individual semiconductor die.

Maintenance rules:

• DecodePack rules emit canonical snake_case keys directly, without legacy aliases or runtime conversions. Adding/renaming fields requires updating source rules, shared tables, packages/core/src/field-registry.ts, packages/core/resources/lang/eng.json, chs.json, and tests. Add retired keys to the metadata audit denylist.
• Maintenance metadata ownership is defined in Reference policy (Chinese).
• Omit unknown values; do not emit Unknown, empty arrays, or NAND-only default slots to fill an old response shape.
• vendor, chip_kind, product_type, part_number, identifier, id_scheme, and marking_code belong in device, not duplicated in detail fields.
• Parsing tokens such as config_code, package_code, controller_code, die_code, feature_code, and other *_code values remain internal. Do not expose them in fields.*, detail blocks, or labels named Code. Prefer semantic fields such as package, controller, controller_revision, die_revision, die_codename, process_node, and special_option. Pure clues such as nand_component, design IDs, or generation codes also remain internal when they lack stable readable semantics.
• Capacity fields use numeric Mbit throughout rules, shared tables, and results. density, storage_density, component_density, die_density, dram_density, and dram_die_density must have positive numeric value and unit = Mbit. NAND/managed-NAND displays use bytes; DRAM displays use bits. Interfaces and product types have their own fields. Omit unknown capacity rather than using zero/string placeholders or legacy string conversions.

Field groups

packages/core/src/field-profiles.ts is the single source of detail field placement and order, selected by chip kind or identifier scheme. The field registry defines types, units, labels, formatting, and importance. Add new fields to their applicable profiles, once per profile. Identity stays in device; internal tokens stay out of detail groups.

Context	Group
Raw NAND die density, die/CE/channel/plane counts, page/block geometry	geometry
Managed NAND internal density, geometry, and NAND interface	components; device/storage capacity and external interface belong in storage
Standalone DRAM die density, die/CS/bank/channel counts	geometry; process, die revision, and family stay with primary specifications in dram
MCP/eMCP/uMCP DRAM subsystem	DRAM density, die count, and timings in dram, separate from NAND components
Standalone DRAM CAS latency and meaningful speed grades	timing; interface modes and ECC state in interface
NAND Flash ID die density/counts and page/block geometry	geometry; NAND interface in interface
Marking year digit, week, die revision, diffusion and encapsulation locations	marking; package properties in package, controller revision in controllers

Known public fields absent from a profile still enter additional to preserve information. Intentional cases include unknown chip kinds and the Flash ID enterprise flag. Fields with established semantics in normal product lines should have explicit groups.

Public values and deduplication

• Keep the most informative canonical field for each meaning. Retain speed_grade only when it adds grading, test quality, CAS/RL/WL timing, or temperature information beyond dram_speed, such as 046BT Fully Tested or PG Partial Good Mixed Bins. Omit repeated speed units and token echoes; do not add 1333Mbps/pin beside DDR3L-1333 (667MHz).
• Expose Engineering Sample(s) / Early Engineering Sample(s) only through prod_status, not again in product_class, sku, or special_option. Multiple tokens yielding the same status still produce one field; preserve source singular/plural wording.
• voltage / dram_voltage contain voltage information, without repeated DDR generation, DRAM type, or product-line text.
• Numeric generations use compact GenN, such as Gen1, Gen2 eMCP, or Gen5 Xtacking 4.0, in generation_info, product_generation, dram_generation, generation-valued prod_status, and other public generation values. Avoid 1st Gen, 1st generation, Gen 1, and CXMT G3. Internal generation_code/token names, vendor process aliases in process_node, and standards/proper names such as PCIe Gen4 / USB 3.2 Gen 1 retain their spelling. Migrate rules, tables, tests, and documents directly, without runtime normalization.
• package contains only package types, pin counts, dimensions, or special details confirmed by official materials, datasheets, catalogs, teardowns, or trusted distributors. Format: TYPE[-PIN][, DIM][, SPECIAL], such as FBGA-153, 11.5x13x1.0, BGA, 11.0x13.0x0.8, or WLGA. If pins are unknown, emit the type without guessing; if only dimensions are confirmed, emit dimensions alone. Omit mm, ball, pin, and Unknown. An unexplained package token alone is not a public package value. See Output and evidence (Chinese).

Identity, summaries, and relations

Field	Meaning	Location
part_number	Normalized PN	device.partNumber
vendor	Vendor display identity	device.vendor
chip_kind	Chip kind, such as raw_nand, managed_nand, or dram	device.chipKind
product_type	Product subtype: eMMC, UFS, SATA, SAS, NVMe, eMCP/uMCP, E2NAND/E3NAND, LPDDR5X, DDR4, etc.	device.productType
identifier	Typed identifier value, such as NAND Flash ID	device.identifier
id_scheme	Identifier namespace, such as nand.flash_id	device.idScheme
marking_code	FBGA/package marking code	device.markingCode

subtitle is for quick display, not structured parsing. Typical forms:

• NAND PN: NAND Flash · KIOXIA · 32GB MLC
• Managed NAND: eMCP · SAMSUNG · 8GB · 32Gb LPDDR4
• DRAM: LPDDR5X · Micron · 64Gb · x64
• NAND Flash ID: Micron · 8GB MLC · 1 die · 2 planes

relations[] expresses:

• identifier_for: PN–NAND Flash ID association.
• marking_for: marking-code to real-PN association.
• alternate_part: a one-way relation from the current PN to another PN, such as a Phison PN to an original-vendor PN.
• component: storage/DRAM subcomponents of composite products such as eMCP/uMCP.

Put direct navigation to another decode operation in relations[].action; do not add a separate top-level actions[].

PN display and input

input.query is the original input, input.normalized is cleaned input, and device.partNumber is the display PN established by a rule or catalog. Tolerant matching keys may ignore - / :, but cannot serve directly as display values. Restore recognized ordering suffix separators at product-line boundaries; do not append a hyphen to a body-only input or invent suffixes. Search, candidates, and relation actions share this display logic. Explicit device-alias conversions, such as H25 -X normalization, still apply.

Micron markings

A five-character FBGA code and a full marking with five leading trace characters resolve to the same device. device.partNumber remains the real PN; device.markingCode is the five-character FBGA code. input.query retains the original input and input.normalized retains the full normalized input, not just its FBGA suffix. Search also returns real PNs; full markings in FDB must not appear as additional devices. The old micron_part_number and prod_date fields are removed.

Full markings add only these marking fields, without a separate date code or an inferred full year:

Field	Chinese label	Meaning
marking_year_digit	年码	Final year digit as string 0–9, preserving 0
marking_week	周次	Even marking workweek from 2–52; display as two digits, such as 06
marking_die_revision	Die版本	Third marking character; does not override PN-decoded die_revision
diffusion_loc	晶圆产地	Wafer diffusion location
encapsulation_loc	封装地	Encapsulation location

For example, 1CB2DJZ215 and JZ215 both identify MTFDHBL256TDQ-1AT12ATYY. The full marking additionally gives year digit 1, week 06, die revision B, diffusion in Singapore, and encapsulation in Malaysia. Validate year and week separately. Omit unknown locations with a warning; original characters remain traceable in the full input. A five-character code alone does not create an empty marking group.

Source: Micron CSN-11 Rev.BF, 05/2026, pages 3, 5, and 6.

NAND / managed NAND

Field	Meaning	Example
density	Current chip/storage capacity, unit = Mbit, byte display	65536 / 8GB
component_density	Total package/component capacity, often for MCP/eMCP/uMCP components; byte display	524288 / 64GB
component_density_options	Unresolved component-capacity candidates: distinct positive Mbit numbers, not a sum or range; mutually exclusive with scalar component_density	[262144, 524288] / 32GB / 64GB
component_voltage	Package/component voltage, without product-line or generation text	3.3V
storage_density	MCP/eMCP/uMCP storage-subsystem capacity; byte display	262144 / 32GB
die_density	Capacity of one NAND die; byte display	1024 / 128MB
die_codename	Public NAND process name, labeled Process / 制程; internal profile keys may be more specific	BiCS4 / 20nm
process_alias	Process codename or vendor alias, preserving independent clues such as X3-9060 or 8T23	X3-9060
die_stack	Non-numeric NAND stack structure or vendor structure code; pure counts use die_count	DSP (4-die x2), 2-Deck
die_count / ce_count / rb_count / channel_count / plane_count	NAND topology counts, consistently using *_count keys	2 / 2 / 2 / 4 / 4
page_size / block_size / sector_size	Page/block/sector geometry; byte fields use unit = byte	16384 / 16KiB
half_page_and_size	Half-page/page-size package feature	true
generation_info	NAND product generation, layers, or process node	V8 236L
series_info	Vendor series description	3D-V4
storage_interface	Managed NAND or MCP storage interface	eMMC 5.1, UFS 4.0
nand_interface	Structured NAND specification: device rating and die capability; not the external managed-NAND speed	{ capability: "ONFI 4.1; Max Speed=1600MT/s" }
interface_type	Interface mode, gear, channels, or HS mode	HS400, Gear 4 / 2-Lane
interface_note	Additional information from interface/width tables, not a default Normal	HP w/ FBI Chip
toggle	Toggle DDR marker	DDR
controller / controller_revision	Supported controllers or controller revision	["SM2244LT", "SM3270AC"], V4.41 EF
package_configuration	Storage/DRAM/eMMC/UFS chip composition inside MCP/eMCP/uMCP, not dimensions	4 LPDRAM, 1 UFS
form_factor	Whole-device/module form factor for SSD/module products, distinct from chip package	2.5-inch, 7mm
dram_configuration	Actual DRAM composition when one MCP/eMCP/uMCP PN mixes die/PN tokens	48Gb (4 x Y2BM) + 16Gb (2 x Y21N)
product_class / assembly / segment / sku	Expanded vendor class, assembly, segment, or SKU tokens	Automotive Grade 2, Client Component
operation_temperature	Operating temperature range	-40~105C
lead_free / halogen_free / wafer / multi_chip / cu	Environmental, wafer, multi-chip, or copper-process flags	true
bad_block	Bad-block policy	Include Bad Block
ecc_enabled	Internal ECC state	true / Yes

Conventions:

• Prefer die_codename for NAND process/generation matches, labeled Process / 制程. A generation fully expressed by the process name in shared tables is not repeated in generation_info; independent product generations, Xtacking versions, series, and nodes may coexist. The result builder must not remove them merely because a die name exists. Public 2D values prefer lithography names such as 15nm, A19nm, or 20nm; Kioxia/SanDisk 3D values use BiCS3, BiCS4, or BiCS4.5 without vendor/cell suffixes. layer_count is separate, in the main NAND decode block rather than package details. Full process aliases such as X3-9060 and 8T23 use process_alias. Internal keys and FDB fallbacks are defined in NAND profiles (Chinese).
• Micron/Intel 2D raw NAND details keep lithography in die_codename, while summaries prefer die codenames from process_alias, such as M70M / L84A, over generic process names.
• firmware_match / die_mark are not public by default; internal naming follows the NAND profile reference.
• When storage_interface exactly duplicates product_type, retain the structured identity unless the interface adds a version, channel, gear, or other information.
• eMMC/UFS protocol versions belong directly in storage_interface. product_version retains versions such as NVMe at a different layer from the PCIe physical interface. Parallel NAND in MCP stays explicit in product_mode; a more specific controller protocol must not erase its companion interface. Preserve PL_REG, DC, and version-candidate ranges with their original meanings.
• NAND die capability uses nand_interface.capability; YMTC PN and raw NAND FDB device ratings use nand_interface.rating. Equal text may display once while retaining both scopes; different values display separately. value preserves both scopes and display formats them. The schema rejects old strings, empty objects/specifications, and unknown properties. Unmigrated PN ratings remain in speed_grade; do not discard test/grading information. Managed-NAND brief summaries must not use the internal NAND interface as the external interface.
• Vendor brands/series such as iNAND, iSSD, and moviNAND are not product_type; use stable semantic fields such as product_family when needed. Intermediate system/group variables are not public. SSD-type packages are classified by interface as sata/sas/nvme.

NAND Flash ID

NAND Flash IDs use decodeIdentifier / searchIdentifiers. Both input.constraints.idScheme and device idScheme are nand.flash_id.

Field	Meaning	Location/group
identifier	NAND Flash ID	device.identifier
id_scheme	nand.flash_id	device.idScheme
density	ID-derived capacity	geometry
die_density / die_stack	Single-die capacity and non-numeric stack structure	geometry
cell_level	SLC / MLC / TLC / QLC	geometry
die_count / ce_count / rb_count / channel_count / plane_count	Topology counts	geometry
page_size / block_size / pages_per_block / blocks_per_lun	NAND geometry	geometry
redundant_area_size / simultaneously_programmed_pages	Spare-area size and simultaneously programmable pages	geometry
voltage / interface_type / nand_interface / ecc_level	Voltage, interface mode, NAND capability, and ECC requirements	interface
timing_mode_async / edo / interleave / cache / revision	Timing, EDO, interleave, cache, and revision extensions	timing
enterprise	Enterprise flag	additional
controller	Associated controllers	controllers

Related PNs use identifier_for relations rather than concatenated translated strings. Attach action when navigation is available.

DRAM

DRAM and MCP DRAM subsystems use these fields to distinguish them from NAND:

Field	Meaning	Example
dram_type	DRAM type	LPDDR5X, DDR4, GDDR7
dram_density	Total DRAM subsystem/chip capacity, unit = Mbit	65536 / 64Gb
dram_die_density	Capacity of one DRAM die	16384 / 16Gb
dram_die_count	Physical DRAM die count, distinct from NAND die_count	4
cs_count / channel_count	DRAM CS/rank or channel count; may coexist with dram_die_count	2
dram_generation	DRAM process/generation	1y-nm LPDDR4X, LPDDR5X
dram_speed	DRAM speed or speed bin	8533 Mbps, DDR4-2666 CL19
dram_width	Organization width, unit = bit	16 / x16
dram_voltage	DRAM voltage/I/O information	VDD2 1.8V / VDDQ 0.6V
cas_latency	Expanded CAS latency token	13
read_latency	Source-defined RL; must not be relabeled CAS	16
die_revision	DRAM die/design revision	Rev A, Rev E
solder_type	Expanded solder/plating token	100% matte Sn
special_option	Addressing, CKE, layout, or other options outside die stacking	Reduced page-size addressing
prod_status	Production status, such as ES/MS/QS	ES

Standalone DRAM conventions:

• device.chipKind = "dram"; device.productType uses short types such as ddr4 or lpddr5x.
• dram_type and product_type omit vendor names and redundant SDRAM/SGRAM suffixes; do not use Micron DDR5 SDRAM.
• Do not copy dram_density/dram_width into other fields when already present in the main DRAM block.
• Vendor package/configuration tokens follow the public-value and package rules above.
• Default topology is allowed only after a vendor rule recognizes the package/topology token. A confirmed public package may default to dram_die_count=1; ordinary DDR may also default to cs_count=1. If package and die/CS recognition come from different tokens, use internal meta.dramTopologyTokenRecognized: true for a known token without publishable package details, false for an unknown token even when another position establishes a package. Explicit die/CS or stack layout always wins over defaults.
• Do not infer CS for LPDDR/GDDR. High capacity alone does not prove physical die count; topology evidence is required.
• dram_die_count is physical DRAM dies; cs_count is CS/rank count. PoP/MCP package information belongs in package. Reduced-page addressing, 2 CKE, and JEDEC/Flexframe layouts that are not die/CS facts belong in special_option.
• Speed/temperature/revision suffixes after - are not mandatory for recognizing the main structure. When absent, still return confirmed vendor, type, density, width, package, and die stacking.

For MCP/eMCP/uMCP with both NAND and DRAM:

• NAND storage uses storage_*, component_density, die_density, die_count, and generation_info.
• DRAM uses dram_*, with dram_die_count rather than storage die_count.
• Express subcomponents through component relations, rather than flattening storage and DRAM into product-specific keys.

Result construction and information preservation

Resolve synonymous information at source rules, shared tables, and resource ingestion. Before removing a field, verify that every unique value and its scope has another public carrier. Equal numeric capacities at device/component/die scopes, or distinct protocols, cannot be deduplicated by text.

hiddenFields is currently used by source rules only for internal density: classification/search still use it while storage/DRAM fields carry public capacity. Used-key sets in grouping only determine which fields enter additional; ensureProcessAliasField adds independent process aliases. The result builder does not hide cross-field information through pruneRedundantFields or suppressDieProfileDuplicateFields.

Before/after measurements are in the Field audit (Chinese).