biblio-2.bib

%comment{This file was created with betterbib v3.5.5.}


@article{guinea_energy_2010,
 author = {Guinea, F. and Katsnelson, M.I. and Geim, A.K.},
 title = {Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering},
 volume = {6},
 issn = {1745-2473, 1745-2481},
 url = {https://doi.org/10.1038/nphys1420},
 doi = {10.1038/nphys1420},
 number = {1},
 urldate = {2020-05-18},
 journal = {Nat. Phys.},
 month = sep,
 year = {2009},
 pages = {30-33},
 source = {Crossref},
 publisher = {Springer Science and Business Media LLC},
}

@article{katsnelson_graphene_2013,
 author = {Katsnelson, Mikhail I. and Fasolino, Annalisa},
 title = {Graphene as a Prototype Crystalline Membrane},
 volume = {46},
 issn = {0001-4842, 1520-4898},
 url = {https://doi.org/10.1021/ar300117m},
 doi = {10.1021/ar300117m},
 abstract = {The understanding of the structural and thermal properties of membranes, low-dimensional flexible systems in a space of higher dimension, is pursued in many fields from string theory to chemistry and biology. The case of a two-dimensional (2D) membrane in three dimensions is the relevant one for dealing with real materials. Traditionally, membranes are primarily discussed in the context of biological membranes and soft matter in general. The complexity of these systems hindered a realistic description of their interatomic structures based on a truly microscopic approach. Therefore, theories of membranes were developed mostly within phenomenological models. From the point of view of statistical mechanics, membranes at finite temperature are systems governed by interacting long-range fluctuations.Graphene, the first truly two-dimensional system consisting of just one layer of carbon atoms, provides a model system for the development of a microscopic description of membranes. In the same way that geneticists have used Drosophila as a gateway to probe more complex questions, theoretical chemists and physicists can use graphene as a simple model membrane to study both phenomenological theories and experiments. In this Account, we review key results in the microscopic theory of structural and thermal properties of graphene and compare them with the predictions of phenomenological theories. The two approaches are in good agreement for the various scaling properties of correlation functions of atomic displacements. However, some other properties, such as the temperature dependence of the bending rigidity, cannot be understood based on phenomenological approaches. We also consider graphene at very high temperature and compare the results with existing models for two-dimensional melting. The melting of graphene presents a different scenario, and we describe that process as the decomposition of the graphene layer into entangled carbon chains.},
 number = {1},
 urldate = {2020-05-18},
 journal = {Acc. Chem. Res.},
 month = oct,
 year = {2012},
 pages = {97-105},
 source = {Crossref},
 publisher = {American Chemical Society (ACS)},
}

@misc{noauthor_energy_nodate,
 title = {Energy gaps and a zero-field quantum {Hall} effect in graphene by strain engineering {\textbar } {Nature} {Physics}},
 url = {https://www.nature.com/articles/nphys1420},
 urldate = {2020-05-18},
}


@article{katsnelson_graphene_2007,
 author = {Katsnelson, Mikhail I.},
 title = {Graphene: {Carbon} in two dimensions},
 volume = {10},
 issn = {1369-7021},
  url = {https://doi.org/10.1016/s1369-7021(06)71788-6},
 doi = {10.1016/s1369-7021(06)71788-6},
 abstract = {Carbon is one of the most intriguing elements in the Periodic Table. It forms many allotropes, some known from ancient times (diamond and graphite) and some discovered 10-20 years ago (fullerenes and nanotubes). Interestingly, the two-dimensional form (graphene) was only obtained very recently, immediately attracting a great deal of attention. Electrons in graphene, obeying a linear dispersion relation, behave like massless relativistic particles. This results in the observation of a number of very peculiar electronic properties -- from an anomalous quantum Hall effect to the absence of localization -- in this, the first two-dimensional material. It also provides a bridge between condensed matter physics and quantum electrodynamics, and opens new perspectives for carbon-based electronics.},
 number = {1-2},
 urldate = {2020-05-18},
 journal = {Mater. Today},
 month = jan,
 year = {2007},
 pages = {20-27},
 source = {Crossref},
 publisher = {Elsevier BV},
}

@article{kalantar-zadeh_two_2016,
 author = {Kalantar-zadeh, Kourosh and Ou, Jian Zhen and Daeneke, Torben and Mitchell, Arnan and Sasaki, Takayoshi and Fuhrer, Michael S.},
 title = {Two dimensional and layered transition metal oxides},
 volume = {5},
 issn = {2352-9407},
 url = {https://doi.org/10.1016/j.apmt.2016.09.012},
 doi = {10.1016/j.apmt.2016.09.012},
 abstract = {Single- or multi-layer transition metal oxides (TMOs) have a relatively longer history than other atomically thin materials. TMOs comprise many earth-abundant minerals and have been used for millenia as construction materials, pigments, lubricants, for heat management and many other applications. In TMOs, the transition metal s electrons are strongly pulled by oxygen, and consequently the structural, physical and chemical properties are mostly determined by the strongly correlated d electrons. TMOs are also highly tunable owing to the diversity of their chemical composition, crystal structure and relative ease in inducing oxygen defects. Two dimensional (2D) TMOs often show different physical and chemical properties in comparison to their bulk counterparts. These differences give rise to a variety of remarkable electronic properties such as high temperature superconductivity and multiferroicity and also unique optical, mechanical and thermal phenomena. Additionally, reducing the thickness of TMOs can alter their catalytic and chemical characteristics. Despite their unique properties, single- and few-layer TMOs have received relatively little attention compared to other recent families of atomically thin materials such as layered transition metal dichalcogenides. The overarching aim of this review is to bring the unique aspects of TMOs to the attention of the research community to establish a strong future for research on 2D and layered TMOs. In this review, a comprehensive overview regarding 2D and layered TMOs will be presented. The fundamentals and applications of planar TMOs are discussed. The manuscript will also present future prospects and pathways to new developments that are offered by such TMOs.},
 urldate = {2020-05-18},
 journal = {Appl. Mater. Today},
 month = dec,
 year = {2016},
 keywords = {Biosystem, Catalyst, Energy, Sensor, Spintronics, Transistor},
 pages = {73-89},
 source = {Crossref},
 publisher = {Elsevier BV},
}

@article{yang_formation_2019,
 author = {Yang, Juan and Zeng, Zhiyuan and Kang, Jun and Betzler, Sophia and Czarnik, Cory and Zhang, Xiaowei and Ophus, Colin and Yu, Chang and Bustillo, Karen and Pan, Ming and Qiu, Jieshan and Wang, Lin-Wang and Zheng, Haimei},
 title = {Formation of two-dimensional transition metal oxide nanosheets with nanoparticles as intermediates},
 volume = {18},
 copyright = {2019 This is a U.S. government work and not under copyright protection in the U.S.; foreign copyright protection may apply},
 issn = {1476-1122, 1476-4660},
 url = {https://doi.org/10.1038/s41563-019-0415-3},
 doi = {10.1038/s41563-019-0415-3},
 abstract = {Two-dimensional (2D) materials have attracted significant interest because of their large surface-to-volume ratios and electron confinement. Compared to common 2D materials such as graphene or metal hydroxides, with their intrinsic layered atomic structures, the formation mechanisms of 2D metal oxides with a rocksalt structure are not well understood. Here, we report the formation process for 2D cobalt oxide and cobalt nickel oxide nanosheets, after analysis by in situ liquid-phase transmission electron microscopy. Our observations reveal that three-dimensional (3D) nanoparticles are initially formed from the molecular precursor solution and then transform into 2D nanosheets. Ab initio calculations show that a small nanocrystal is dominated by positive edge energy, but when it grows to a certain size, the negative surface energy becomes dominant, driving the transformation of the 3D nanocrystal into a 2D structure. Uncovering these growth pathways, including the 3D-to-2D transition, provides opportunities for future material design and synthesis in solution.},
 number = {9},
 urldate = {2020-05-18},
 journal = {Nat. Mater.},
 month = jul,
 year = {2019},
 pages = {970-976},
 source = {Crossref},
 publisher = {Springer Science and Business Media LLC},
}

@article{yao_ferrimagnetism_2020,
 author = {Yao, Weiliang and Li, Yuan},
 title = {Ferrimagnetism and anisotropic phase tunability by magnetic fields in {Na2Co2TeO6}},
 volume = {101},
 url = {https://doi.org/10.1103/physrevb.101.085120},
 doi = {10.1103/physrevb.101.085120},
 abstract = {Na2Co2TeO6 has recently been proposed to be a Kitaev-like honeycomb magnet. To assess how close it is to realizing Kitaev quantum spin liquids, we have measured magnetization and specific heat on high-quality single crystals in magnetic fields applied along high-symmetry directions. Small training fields reveal a weak but canonical ferrimagnetic behavior below 27 K, which suggests that the previously established zigzag antiferromagnetic order, with collinear moments pointing along the zigzag chains, must be supplemented by q=0 (e.g., N\'eel type in the absence of structural modulations) moment canting. Moderate fields in the honeycomb plane suppress the thermal transition at 27 K, and seem to partly reverse the moment canting when applied perpendicular to the zigzag chains. In contrast, out-of-plane fields leave the transition largely unaffected, but promotes another transition below 10 K, possibly also related to canting reversal. The magnetism in Na2Co2TeO6 is highly anisotropic and close to tipping points between competing phases.},
 number = {8},
 urldate = {2020-05-18},
 journal = {Phys. Rev. B},
 month = feb,
 year = {2020},
 pages = {085120},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {2469-9950, 2469-9969},
}

@article{wang_electrolytic_2018,
 author = {Wang, Jian and Zhou, Yuli and He, Mingyang and Wangyang, Peihua and Lu, Yangfan and Gu, Lin},
 title = {Electrolytic approach towards the controllable synthesis of {NiO} nanocrystalline and self-assembly mechanism of {Ni(OH)2} precursor under electric, temperature and magnetic fields},
 volume = {20},
 issn = {1466-8033},
 url = {https://doi.org/10.1039/c8ce00263k},
 doi = {10.1039/c8ce00263k},
 abstract = {We report that two-dimensional (2D) hexagonal nickel oxide (NiO) nanosheets have been successfully synthesized using the electrolysis of nickel plate as the anode in deionized water. The electrolysis processes first produced 2D nickel hydroxide (Ni(OH)2) nanosheets, which were transformed to 2D NiO by calcination. Contrary to the classical crystallization mechanism, contiguous SEM observations revealed that the Ni(OH)2 were produced via a multistep oriented attachment (MOA) mode, in which the [Ni(OH)6]4$-$ coordination octahedron serves as the building block. Hydrothermal experiments further showed that the technique can be applied to the synthesis of 3D Ni(OH)2 nanoflowers with the aid of introduced Ni(OH)2 nanosheets. A growth mechanism based on the selective-surface adsorption and intercalation of nitrate ions (NO3$-$) and hydroxyl ions (OH$-$) as well as the adsorption of free ammonia molecules (NH3), was proposed. The crystal morphologies and thickness can be controlled by a charging magnetic field, suggesting that the crystal growth mechanisms are dominated by micromechanics such as the magnetic dipole force, Van der Waals force and magnetic force.},
 number = {17},
 urldate = {2020-05-18},
 journal = {CrystEngComm},
 month = apr,
 year = {2018},
 pages = {2384-2395},
 source = {Crossref},
 publisher = {Royal Society of Chemistry (RSC)},
}

@article{ad4f81a986ab409fba05d562d4799cbc,
 author = {Jia, Yinglu and Zhao, Min and Gou, Gaoyang and Zeng, Xiao Cheng and Li, Ju},
 title = {Niobium oxide dihalides {NbOX2:} {A} new family of two-dimensional van der {Waals} layered materials with intrinsic ferroelectricity and antiferroelectricity},
 abstract = {Two-dimensional (2D) ferroelectric (FE) materials displaying spontaneous polarizations are promising candidates for miniaturized electronic and memory devices. However, stable FE orderings are only found in a small number of 2D materials by experiment so far. In the current work, based on high-throughput screening of a 2D van der Waals layered materials database and first-principles calculations, we demonstrate niobium oxide dihalides NbOX2 (X = Cl, Br and I), a group of experimentally synthesized yet underexplored van der Waals layered compounds, as a new family of 2D materials that simultaneously exhibit intrinsic in-plane ferroelectricity and antiferroelectricity. Similar to FE perovskite oxides, polar displacement of Nb cations relative to the center of the anion octahedral cage can lead to experimentally measurable FE polarizations up to 27 $\mu$C cm-2 in layered NbOX2. The presence of low-lying antiferroelectric (AFE) phases can effectively reduce the energy barrier associated with polarization switching, suggesting switchable ferroelectricity is experimentally achievable. In addition, the mechanism driving FE phase transitions in NbOX2 monolayers around Curie temperature TC is clearly revealed by our finite-temperature simulations. NbOCl2 monolayer is predicted to be a stable ferroelectric with TC above room temperature. Moreover, application of NbOBr2 and NbOI2 monolayers as 2D dielectric capacitors is further developed, where electrostatic energy storage of nearly 100},
 year = {2019},
 month = sep,
 doi = {10.1039/c9nh00208a},
 volume = {4},
 pages = {1113-1123},
 journal = {Nanoscale Horiz.},
 issn = {2055-6756, 2055-6764},
 publisher = {Royal Society of Chemistry (RSC)},
 number = {5},
 source = {Crossref},
 url = {https://doi.org/10.1039/c9nh00208a},
}

@article{leng_molecularly_2018,
 author = {Leng, Kai and Abdelwahab, Ibrahim and Verzhbitskiy, Ivan and Telychko, Mykola and Chu, Leiqiang and Fu, Wei and Chi, Xiao and Guo, Na and Chen, Zhihui and Chen, Zhongxin and Zhang, Chun and Xu, Qing-Hua and Lu, Jiong and Chhowalla, Manish and Eda, Goki and Loh, Kian Ping},
 title = {Molecularly thin two-dimensional hybrid perovskites with tunable optoelectronic properties due to reversible surface relaxation},
 volume = {17},
 copyright = {2018 The Author(s), under exclusive licence to Springer Nature Limited},
 issn = {1476-1122, 1476-4660},
 url = {https://doi.org/10.1038/s41563-018-0164-8},
 doi = {10.1038/s41563-018-0164-8},
 abstract = {Due to their layered structure, two-dimensional Ruddlesden--Popper perovskites (RPPs), composed of multiple organic/inorganic quantum wells, can in principle be exfoliated down to few and single layers. These molecularly thin layers are expected to present unique properties with respect to the bulk counterpart, due to increased lattice deformations caused by interface strain. Here, we have synthesized centimetre-sized, pure-phase single-crystal RPP perovskites (CH3(CH2)3NH3)2(CH3NH3)n$-$1PbnI3n+1 (n = 1--4) from which single quantum well layers have been exfoliated. We observed a reversible shift in excitonic energies induced by laser annealing on exfoliated layers encapsulated by hexagonal boron nitride. Moreover, a highly efficient photodetector was fabricated using a molecularly thin n = 4 RPP crystal, showing a photogain of 105 and an internal quantum efficiency of {\textasciitilde }34\%. Our results suggest that, thanks to their dynamic structure, atomically thin perovskites enable an additional degree of control for the bandgap engineering of these materials},
 number = {10},
 urldate = {2020-05-18},
 journal = {Nat. Mater.},
 month = sep,
 year = {2018},
 pages = {908-914},
 source = {Crossref},
 publisher = {Springer Science and Business Media LLC},
}

@article{spanopoulos_uniaxial_2019,
 author = {Spanopoulos, Ioannis and Hadar, Ido and Ke, Weijun and Tu, Qing and Chen, Michelle and Tsai, Hsinhan and He, Yihui and Shekhawat, Gajendra and Dravid, Vinayak P. and Wasielewski, Michael R. and Mohite, Aditya D. and Stoumpos, Constantinos C. and Kanatzidis, Mercouri G.},
 title = {Uniaxial Expansion of the {2D} Ruddlesden--Popper Perovskite Family for Improved Environmental Stability},
 volume = {141},
 issn = {0002-7863, 1520-5126},
 url = {https://doi.org/10.1021/jacs.9b01327},
 doi = {10.1021/jacs.9b01327},
 abstract = {The unique hybrid nature of 2D Ruddlesden--Popper (R--P) perovskites has bestowed upon them not only tunability of their electronic properties but also high-performance electronic devices with improved environmental stability as compared to their 3D analogs. However, there is limited information about their inherent heat, light, and air stability and how different parameters such as the inorganic layer number and length of organic spacer molecule affect stability. To gain deeper understanding on the matter we have expanded the family of 2D R--P perovskites, by utilizing pentylamine (PA)2(MA)n$-$1PbnI3n+1 (n = 1--5, PA = CH3(CH2)4NH3+, C5) and hexylamine (HA)2(MA)n$-$1PbnI3n+1 (n = 1--4, HA = CH3(CH2)5NH3+, C6) as the organic spacer molecules between the inorganic slabs, creating two new series of layered materials, for up to n = 5 and 4 layers, respectively. The resulting compounds were extensively characterized through a combination of physical and spectroscopic methods, including single crystal X-ray analysis. High resolution powder X-ray diffraction studies using synchrotron radiation shed light for the first time to the phase transitions of the higher layer 2D R--P perovskites. The increase in the length of the organic spacer molecules did not affect their optical properties; however, it has a pronounced effect on the air, heat, and light stability of the fabricated thin films. An extensive study of heat, light, and air stability with and without encapsulation revealed that specific compounds can be air stable (relative humidity (RH) = 20--80\% $\pm$ 5\%) for more than 450 days, while heat and light stability in air can be exponentially increased by encapsulating the corresponding films. Evaluation of the out-of-plane mechanical properties of the corresponding materials showed that their soft and flexible nature can be compared to current commercially available polymer substrates (e.g., PMMA), rendering them suitable for fabricating flexible and wearable electronic devices.},
 number = {13},
 urldate = {2020-05-18},
 journal = {J. Am. Chem. Soc.},
 month = mar,
 year = {2019},
 pages = {5518-5534},
 source = {Crossref},
 publisher = {American Chemical Society (ACS)},
}

@article{zhang_two-dimensional_2019,
 author = {Zhang, Wei-xi and Li, Yong and Jin, Hui and She, Yan-chao},
 title = {Two-dimensional transition-metal halide {CoBr3} with spin-polarized Dirac cone},
 volume = {21},
 issn = {1463-9076, 1463-9084},
 url = {https://doi.org/10.1039/c9cp03337h},
 doi = {10.1039/c9cp03337h},
 abstract = {Recently, the discovery of two-dimensional transition-metal materials with non-trivial magnetic and electronic properties has spurred huge interest in investigating their applications in nanotechnology. Here, we report that the monolayer of CoBr3 possesses a quantum anomalous Hall insulating phase generated on the basis of first-principles calculations. We find that the CoBr3 monolayer is an intrinsic two-dimensional ferromagnetic material with a Curie temperature Tc = 264 K predicted from Monte Carlo simulations. The phonon spectra analysis indicates that the CoBr3 monolayer is dynamically stable. Taking into account spin--orbit coupling, this makes the electronic structure of the CoBr3 monolayer topologically non-trivial with a global band gap of 8.7 meV. The anomalous Hall conductivity calculation shows a Chern number C = 2, meaning the presence of a two edge state in nanoribbons of finite width. These findings not only add an experimentally feasible member to the quantum anomalous Hall insulator family, but also pave the way for highly promising application potentials in nanoelectronics and spintronics.},
 number = {32},
 urldate = {2020-05-18},
 journal = {Phys. Chem. Chem. Phys.},
 month = aug,
 year = {2019},
 pages = {17740-17745},
 source = {Crossref},
 publisher = {Royal Society of Chemistry (RSC)},
}

@article{sachs_ferromagnetic_2013,
 author = {Sachs, B. and Wehling, T.O. and Novoselov, K.S. and Lichtenstein, A.I. and Katsnelson, M.I.},
 title = {Ferromagnetic two-dimensional crystals: {Single} layers of {K2CuF4}},
 volume = {88},
  url = {https://doi.org/10.1103/physrevb.88.201402},
 doi = {10.1103/physrevb.88.201402},
 abstract = {The successful isolation of graphene ten years ago has evoked a rapidly growing scientific interest in the nature of two-dimensional (2D) crystals. A number of different 2D crystals has been produced since then, with properties ranging from superconductivity to insulating behavior. Here, we predict the possibility for realizing ferromagnetic 2D crystals by exfoliating atomically thin films of K2CuF4. From a first-principles theoretical analysis, we find that single layers of K2CuF4 form exactly 2D Kosterlitz-Thouless systems. The 2D crystal can form a free-standing membrane, and exhibits an experimentally accessible transition temperature and robust magnetic moments of 1$\mu$B per formula unit. 2D K2CuF4 unites ferromagnetic and insulating properties and is a demonstration of principles for nanoelectronics such as novel 2D-based heterostructures.},
 number = {20},
 urldate = {2020-05-18},
 journal = {Phys. Rev. B},
 month = nov,
 year = {2013},
 pages = {201402},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {1098-0121, 1550-235X},
}

@article{dou_atomically_2015,
 author = {Dou, L. and Wong, A.B. and Yu, Y. and Lai, M. and Kornienko, N. and Eaton, S.W. and Fu, A. and Bischak, C.G. and Ma, J. and Ding, T. and Ginsberg, N.S. and Wang, L.-W. and Alivisatos, A.P. and Yang, P.},
 title = {Atomically thin two-dimensional organic-inorganic hybrid perovskites},
 volume = {349},
 issn = {0036-8075, 1095-9203},
 url = {https://doi.org/10.1126/science.aac7660},
 doi = {10.1126/science.aac7660},
 number = {6255},
 urldate = {2020-05-18},
 journal = {Science},
 month = sep,
 year = {2015},
 pages = {1518-1521},
 source = {Crossref},
 publisher = {American Association for the Advancement of Science (AAAS)},
}

@article{nair_dual_2013,
 author = {Nair, R.R. and Tsai, I.-L. and Sepioni, M. and Lehtinen, O. and Keinonen, J. and Krasheninnikov, A.V. and Castro Neto, A.H. and Katsnelson, M.I. and Geim, A.K. and Grigorieva, I.V.},
 title = {Dual origin of defect magnetism in graphene and its reversible switching by molecular doping},
 volume = {4},
 copyright = {2013 Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved.},
 issn = {2041-1723},
 url = {https://doi.org/10.1038/ncomms3010},
 doi = {10.1038/ncomms3010},
 abstract = {Control of magnetism by applied voltage is desirable for spintronics applications. Finding a suitable material remains an elusive goal, with only a few candidates found so far. Graphene is one of them and attracts interest because of its weak spin--orbit interaction, the ability to control electronic properties by the electric field effect and the possibility to introduce paramagnetic centres such as vacancies and adatoms. Here we show that the magnetism of adatoms in graphene is itinerant and can be controlled by doping, so that magnetic moments are switched on and off. The much-discussed vacancy magnetism is found to have a dual origin, with two approximately equal contributions; one from itinerant magnetism and the other from dangling bonds. Our work suggests that graphene's spin transport can be controlled by the field effect, similar to its electronic and optical properties, and that spin diffusion can be significantly enhanced above a certain carrier density.},
 number = {1},
 urldate = {2020-05-18},
 journal = {Nat Commun},
 month = jun,
 year = {2013},
 pages = {2010},
 source = {Crossref},
 publisher = {Springer Science and Business Media LLC},
}

@article{boukhvalov_hydrogen_2008,
 author = {Boukhvalov, D.W. and Katsnelson, M.I. and Lichtenstein, A.I.},
 title = {Hydrogen on graphene: {Electronic} structure, total energy, structural distortions and magnetism from first-principles calculations},
 volume = {77},
  url = {https://doi.org/10.1103/physrevb.77.035427},
 doi = {10.1103/physrevb.77.035427},
 abstract = {Density-functional calculations of electronic structure, total energy, structural distortions, and magnetism for hydrogenated single-layer, bilayer, and multilayer graphenes are performed. It is found that hydrogen-induced magnetism can survive only at very low concentrations of hydrogen (single-atom regime) whereas hydrogen pairs with optimized structure are usually nonmagnetic. Chemisorption energy as a function of hydrogen concentration is calculated, as well as energy barriers for hydrogen binding and release. The results confirm that graphene can be perspective material for hydrogen storage. Difference between hydrogenation of graphene, nanotubes, and bulk graphite is discussed.},
 number = {3},
 urldate = {2020-05-18},
 journal = {Phys. Rev. B},
 month = jan,
 year = {2008},
 pages = {035427},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {1098-0121, 1550-235X},
}

@article{boukhvalov_sp-electron_2011,
 author = {Boukhvalov, Danil W. and Katsnelson, Mikhail I.},
 title = {sp-Electron Magnetic Clusters with a Large Spin in Graphene},
 volume = {5},
 issn = {1936-0851, 1936-086X},
 url = {https://doi.org/10.1021/nn103510c},
 doi = {10.1021/nn103510c},
 abstract = {Motivated by recent experimental data (Sepioni, M.; et al. Phys. Rev. Lett. 2010, 105, 207$-$205), we have studied the possibility of forming magnetic clusters with spin S {\textgreater } 1/2 on graphene by adsorption of hydrogen atoms or hydroxyl groups. Migration of hydrogen atoms and hydroxyl groups on the surface of graphene during the delamination of HOPG led to the formation of seven atom or seven OH-group clusters with S = 5/2 that were of a special interest. The coincidence of symmetry of the clusters with the graphene lattice strengthens the stability of the cluster. For (OH)7 clusters that were situated greater than 3 nm from one another, the reconstruction barrier to a nonmagnetic configuration was approximately 0.4 eV, whereas for H7 clusters, there was no barrier and the high-spin state was unstable. Stability of the high-spin clusters increased if they were formed on top of ripples. Exchange interactions between the clusters were studied and we have shown that the ferromagnetic state is improbable. The role of the chemical composition of the solvent used for the delamination of graphite is discussed.},
 number = {4},
 urldate = {2020-05-18},
 journal = {ACS Nano},
 month = mar,
 year = {2011},
 pages = {2440-2446},
 source = {Crossref},
 publisher = {American Chemical Society (ACS)},
}

@article{vonsovsky1946exchange,
 author = {Vonsovsky, SV},
 title = {On The Exchange Interaction Of The Valence And Inner Electrons In Ferromagnetic {(Transition)} Metals},
 journal = {Zh. Eksp. Teor. Fiz.},
 volume = {16},
 number = {11},
 pages = {981--989},
 year = {1946},
 publisher = {MEZHDUNARODNAYA KNIGA 39 DIMITROVA UL., 113095 MOSCOW, RUSSIA},
}

@article{nair_fluorographene_2010,
 author = {Nair, Rahul R. and Ren, Wencai and Jalil, Rashid and Riaz, Ibtsam and Kravets, Vasyl G. and Britnell, Liam and Blake, Peter and Schedin, Fredrik and Mayorov, Alexander S. and Yuan, Shengjun and Katsnelson, Mikhail I. and Cheng, Hui-Ming and Strupinski, Wlodek and Bulusheva, Lyubov G. and Okotrub, Alexander V. and Grigorieva, Irina V. and Grigorenko, Alexander N. and Novoselov, Kostya S. and Geim, Andre K.},
 title = {Fluorographene: {A} Two-Dimensional Counterpart of {Teflon}},
 volume = {6},
 copyright = {Copyright \copyright\ 2010 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
 issn = {1613-6810},
  url = {https://doi.org/10.1002/smll.201001555},
 doi = {10.1002/smll.201001555},
 abstract = {A stoichiometric derivative of graphene with a fluorine atom attached to each carbon is reported. Raman, optical, structural, micromechanical, and transport studies show that the material is qualitatively different from the known graphene-based nonstoichiometric derivatives. Fluorographene is a high-quality insulator (resistivity {\textgreater }1012 $\Omega$) with an optical gap of 3 eV. It inherits the mechanical strength of graphene, exhibiting a Young's modulus of 100 N m$-$1 and sustaining strains of 15\%. Fluorographene is inert and stable up to 400 $^\circ$C even in air, similar to Teflon.},
 number = {24},
 urldate = {2020-05-18},
 journal = {Small},
 year = {2010},
 keywords = {fluorination, fluorographene, graphene, Teflon},
 pages = {2877-2884},
 source = {Crossref},
 publisher = {Wiley},
 month = nov,
}

@article{novoselov_two-dimensional_2005,
 author = {Novoselov, K.S. and Geim, A.K. and Morozov, S.V. and Jiang, D. and Katsnelson, M.I. and Grigorieva, I.V. and Dubonos, S.V. and Firsov, A.A.},
 title = {Two-dimensional gas of massless Dirac fermions in graphene},
 volume = {438},
 copyright = {2005 Nature Publishing Group},
 issn = {0028-0836, 1476-4687},
 url = {https://doi.org/10.1038/nature04233},
 doi = {10.1038/nature04233},
 abstract = {Quantum electrodynamics (resulting from the merger of quantum mechanics and relativity theory) has provided a clear understanding of phenomena ranging from particle physics to cosmology and from astrophysics to quantum chemistry1,2,3. The ideas underlying quantum electrodynamics also influence the theory of condensed matter4,5, but quantum relativistic effects are usually minute in the known experimental systems that can be described accurately by the non-relativistic Schr\"odinger equation. Here we report an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon6,7) in which electron transport is essentially governed by Dirac's (relativistic) equation. The charge carriers in graphene mimic relativistic particles with zero rest mass and have an effective `speed of light' c* $\approx$ 106 m s-1. Our study reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions. In particular we have observed the following: first, graphene's conductivity never falls below a minimum value corresponding to the quantum unit of conductance, even when concentrations of charge carriers tend to zero; second, the integer quantum Hall effect in graphene is anomalous in that it occurs at half-integer filling factors; and third, the cyclotron mass mc of massless carriers in graphene is described by E = mcc*2. This two-dimensional system is not only interesting in itself but also allows access to the subtle and rich physics of quantum electrodynamics in a bench-top experiment.},
 number = {7065},
 urldate = {2020-05-18},
 journal = {Nature},
 month = nov,
 year = {2005},
 pages = {197-200},
 source = {Crossref},
 publisher = {Springer Science and Business Media LLC},
}

@book{dyakonov_spin_2017,
 editor = {Dyakonov, Mikhail I.},
 edition = {2},
 series = {Springer {Series} in {Solid}-{State} {Sciences}},
 title = {Spin Physics in Semiconductors},
 isbn = {9783319654355, 9783319654362},
 url = {https://doi.org/10.1007/978-3-319-65436-2},
 abstract = {This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.},
 urldate = {2020-05-17},
 publisher = {Springer International Publishing},
 year = {2017},
 doi = {10.1007/978-3-319-65436-2},
 source = {Crossref},
 issn = {0171-1873, 2197-4179},
}

@article{keffer_theory_1952,
 author = {Keffer, F. and Kittel, C.},
 title = {Theory of Antiferromagnetic Resonance},
 volume = {85},
 url = {https://doi.org/10.1103/physrev.85.329},
 doi = {10.1103/physrev.85.329},
 number = {2},
 journal = {Phys. Rev.},
 month = jan,
 year = {1952},
 pages = {329-337},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0031-899X},
}

@article{dieny_perpendicular_2017,
 author = {Dieny, B. and Chshiev, M.},
 title = {Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications},
 volume = {89},
 url = {https://doi.org/10.1103/revmodphys.89.025008},
 doi = {10.1103/revmodphys.89.025008},
 abstract = {Spin electronics is a rapidly expanding field stimulated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field sensors, nonvolatile memories [magnetic random access memories (MRAM) and especially spin-transfer-torque MRAM (STT-MRAM)]. In addition to the discovery of several physical phenomena (giant magnetoresistance, tunnel magnetoresistance, spin-transfer torque, spin-orbit torque, spin Hall effect, spin Seebeck effect, etc.), outstanding progress has been made on the growth and nanopatterning of magnetic multilayered films and nanostructures in which these phenomena are observed. Magnetic anisotropy is usually observed in materials that have large spin-orbit interactions. However, in 2002 perpendicular magnetic anisotropy (PMA) was discovered to exist at magnetic metal/oxide interfaces [for instance Co(Fe)/alumina]. Surprisingly, this PMA is observed in systems where spin-orbit interactions are quite weak, but its amplitude is remarkably large---comparable to that measured at Co/Pt interfaces, a reference for large interfacial anisotropy (anisotropy$\sim$1.4 erg/cm2=1.4 mJ/m2). Actually, this PMA was found to be very common at magnetic metal/oxide interfaces since it has been observed with a large variety of amorphous or crystalline oxides, including AlOx, MgO, TaOx, HfOx, etc. This PMA is thought to be the result of electronic hybridization between the oxygen and the magnetic transition metal orbit across the interface, a hypothesis supported by ab initio calculations. Interest in this phenomenon was sparked in 2010 when it was demonstrated that the PMA at magnetic transition metal/oxide interfaces could be used to build out-of-plane magnetized magnetic tunnel junctions for STT-MRAM cells. In these systems, the PMA at the CoFeB/MgO interface can be used to simultaneously obtain good memory retention, thanks to the large PMA amplitude, and a low write current, thanks to a relatively weak Gilbert damping. These two requirements for memories tend to be difficult to reconcile since they rely on the same spin-orbit coupling. PMA-based approaches have now become ubiquitous in the designs for perpendicular STT-MRAM, and major microelectronics companies are actively working on their development with the first goal of addressing embedded FLASH and static random access memory-type of applications. Scalability of STT-MRAM devices based on this interfacial PMA is expected to soon exceed the 20-nm nodes. Several very active new fields of research also rely on interfacial PMA at magnetic metal/oxide interfaces, including spin-orbit torques associated with Rashba or spin Hall effects, record high speed domain wall propagation in buffer/magnetic metal/oxide-based magnetic wires, and voltage-based control of anisotropy. This review deals with PMA at magnetic metal/oxide interfaces from its discovery, by examining the diversity of systems in which it has been observed and the physicochemical methods through which the key roles played by the electronic hybridization at the metal/oxide interface were elucidated. The physical origins of the phenomenon are also covered and how these are supported by ab initio calculations is dealt with. Finally, some examples of applications of this interfacial PMA in STT-MRAM are listed along with the various emerging research topics taking advantage of this PMA.},
 number = {2},
 urldate = {2020-05-16},
 journal = {Rev. Mod. Phys.},
 month = jun,
 year = {2017},
 pages = {025008},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0034-6861, 1539-0756},
}

@article{aronov_spin_1983,
 author = {Aronov, AG and Pikus, GE and Titkov, AN},
 title = {Spin relaxation of conduction electrons in p-type {Ill}-{V} compounds},
 volume = {57},
 journal = {Sov. Phys. JETP},
 year = {1983},
 pages = {680},
}

@article{averkiev_spin_2002,
 author = {Averkiev, N.S. and Golub, L.E. and Willander, M.},
 title = {Spin relaxation in asymmetrical heterostructures},
 volume = {36},
 issn = {1063-7826, 1090-6479},
 url = {https://doi.org/10.1134/1.1434520},
 doi = {10.1134/1.1434520},
 abstract = {Electron spin relaxation by the D'yakonov-Perel' mechanism is investigated theoretically in asymmetrical III--V heterostructures. Spin relaxation anisotropy for all three dimensions is demonstrated for a wide range of structural parameters and temperatures. Dependences of spin relaxation rates are obtained both for a GaAs-based heterojunctions and triangular quantum wells. The calculations show a several-orders-of-magnitude difference between spin relaxation times for heterostructure parameters realized in experiments.},
 number = {1},
 urldate = {2020-05-16},
 journal = {Semiconductors},
 month = jan,
 year = {2002},
 pages = {91-97},
 source = {Crossref},
 publisher = {Pleiades Publishing Ltd},
}

@article{burkov_theory_2004,
 author = {Burkov, A.A. and Núñez, Alvaro S. and MacDonald, A.H.},
 title = {Theory of spin-charge-coupled transport in a two-dimensional electron gas with {Rashba} spin-orbit interactions},
 volume = {70},
 url = {https://doi.org/10.1103/physrevb.70.155308},
 doi = {10.1103/physrevb.70.155308},
 abstract = {We use microscopic linear response theory to derive a set of equations that provide a complete description of coupled spin and charge diffusive transport in a two-dimensional electron gas (2DEG) with the Rashba spin-orbit (SO) interaction. These equations capture a number of interrelated effects including spin accumulation and diffusion, Dyakonov-Perel spin relaxation, magnetoelectric, and spin-galvanic effects. They can be used under very general circumstances to model transport experiments in 2DEG systems that involve either electrical or optical spin injection. We comment on the relationship between these equations and the exact spin and charge density operator equations of motion. As an example of the application of our equations, we consider a simple electrical spin injection experiment and show that a voltage will develop between two ferromagnetic contacts if a spin-polarized current is injected into a 2DEG, that depends on the relative magnetization orientation of the contacts. This voltage is present even when the separation between the contacts is larger than the spin diffusion length.},
 number = {15},
 urldate = {2020-05-16},
 journal = {Phys. Rev. B},
 month = oct,
 year = {2004},
 pages = {155308},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {1098-0121, 1550-235X},
}

@article{dyakonov_spintronics_2004,
 author = {Dyakonov, M.I.},
 title = {Spintronics?},
 url = {http://arxiv.org/abs/cond-mat/0401369},
 abstract = {This is a brief review of spin physics in semiconductors, as well as of the historic roots of the recent very active research of spin-related phenomena. The perspectives of "spintronics" are also discussed.},
 urldate = {2020-05-16},
 journal = {arXiv:cond-mat/0401369},
 month = jan,
 year = {2004},
 keywords = {Condensed Matter - Mesoscale and Nanoscale Physics},
 annote = {Comment: 10 pages. Talk presented at the Future Trends in Microelectronics workshop, Corsica, June 2003},
}

@article{DYAKONOV1986,
 author = {D'Yakonov, M. I; Kachorovskij, V. Yu},
 title = {Relaxation de spin d'\'electrons bidimensionnels dans les semiconducteurs sans centre d'inversion; Spin relaxation of two-dimensional electrons in semiconductors without inversion center},
 journal = {Fiz. Tekh. Poluprovodn. },
 year = {1986},
 affiliation = {AN SSSR, fiziko-tekh. inst. im. A. F. Ioffe},
 descriptors = {Cristal non centrosym\'etrique; Effet dimensionnel quantique; Electron; Etude th\'eorique; Mod\`ele 2 dimensions; Pr\'ecession; Relaxation magn\'etique; Relaxation spin; Semiconducteur; Structure bande},
 subject = {Th\'eorie g\'en\'erale des r\'esonances et relaxations[001B70F20]},
 issn = {0015-3222},
 document_type = {Article},
 inist_number = {8564217},
}

@incollection{yafet_g_1963,
 author = {Yafet, Y.},
 editor = {Seitz, Frederick and Turnbull, David},
 title = {g Factors and Spin-Lattice Relaxation of Conduction Electrons},
 volume = {14},
 url = {https://doi.org/10.1016/s0081-1947(08)60259-3},
 abstract = {This chapter is concerned with spin-resonance absorption---that is, power absorption from an oscillating magnetic field---by conduction electrons. The e place of spin resonance in investigations of the band structure contrasts the cases of paramagnetic salts and conductors. In the former, the levels of the ions are discrete; when they have an odd number of electrons each level is at least twofold degenerate. An external magnetic field splits this degeneracy. The microwave spectroscopy of the energy bands is not confined to spin resonance, but includes cyclotron resonance. Of the two, undoubtedly the latter provides the most direct information on the energy bands. Spin resonance does not play the central role that it does in paramagnetic salts. However, it usually plays a useful supplementary role when something about the band structure is known, serving either as a check on the band model or determining the values of additional parameters. The use of spin resonance in semiconductors and semimetals grow as better materials are made and detailed knowledge about their band structure becomes available.},
 urldate = {2020-05-16},
 booktitle = {Solid State Physics},
 publisher = {Elsevier},
 month = jan,
 year = {1963},
 doi = {10.1016/s0081-1947(08)60259-3},
 pages = {1-98},
 source = {Crossref},
 issn = {0081-1947},
 isbn = {9780126077148},
}

@article{dyakonov1972spin,
 author = {Dyakonov, MI and Perel, VI},
 title = {Spin relaxation of conduction electrons in noncentrosymmetric semiconductors},
 journal = {Sov. Phys. Solid State, Ussr},
 volume = {13},
 number = {12},
 pages = {3023--3026},
 year = {1972},
}

@article{elliott_theory_1954,
 author = {Elliott, R.J.},
 title = {Theory of the Effect of Spin-Orbit Coupling on Magnetic Resonance in Some Semiconductors},
 volume = {96},
 url = {https://doi.org/10.1103/physrev.96.266},
 doi = {10.1103/physrev.96.266},
 abstract = {The effect of spin-orbit coupling on the usual band theory of electrons in a lattice is considered. Particular attention is given to the bands in impurity semiconductors with diamond-type structure. g-values are calculated for electron states typical of various possible cases and it is found that different values are obtained according as to whether the Fermi level is near or distant from a band degeneracy. The spin-lattice relaxation time is calculated so that the effect of spin-orbit coupling on the wave functions is included, and times in fair agreement with those observed in silicon and alkali metals are obtained.},
 number = {2},
 urldate = {2020-05-16},
 journal = {Phys. Rev.},
 month = oct,
 year = {1954},
 pages = {266-279},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0031-899X},
}

@article{huertas-hernando_spin-orbit-mediated_2009,
 author = {Huertas-Hernando, D. and Guinea, F. and Brataas, Arne},
 title = {Spin-Orbit-Mediated Spin Relaxation in Graphene},
 volume = {103},
 url = {https://doi.org/10.1103/physrevlett.103.146801},
 doi = {10.1103/physrevlett.103.146801},
 abstract = {We investigate how spins relax in intrinsic graphene. The spin-orbit coupling arises from the band structure and is enhanced by ripples. The orbital motion is influenced by scattering centers and ripple-induced gauge fields. Spin relaxation due to Elliot-Yafet and Dyakonov-Perel mechanisms and gauge fields in combination with spin-orbit coupling are discussed. In intrinsic graphene, the Dyakonov-Perel mechanism and spin flip due to gauge fields dominate and the spin-flip relaxation time is inversely proportional to the elastic scattering time. The spin-relaxation anisotropy depends on an intricate competition between these mechanisms. Experimental consequences are discussed.},
 number = {14},
 urldate = {2020-05-16},
 journal = {Phys. Rev. Lett.},
 month = sep,
 year = {2009},
 pages = {146801},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0031-9007, 1079-7114},
}

@article{lieb_two_1989,
 author = {Lieb, Elliott H.},
 title = {Two Theorems on the {Hubbard} Model},
 volume = {62},
 url = {https://doi.org/10.1103/physrevlett.62.1927.5},
 doi = {10.1103/physrevlett.62.1927.5},
 abstract = {DOI:https://doi.org/10.1103/PhysRevLett.62.1927.5},
 number = {16},
 urldate = {2020-05-12},
 journal = {Phys. Rev. Lett.},
 month = apr,
 year = {1989},
 pages = {1927-1927},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0031-9007},
}

@article{lieb_two_1989-1,
 author = {Lieb, Elliott H.},
 title = {Two theorems on the {Hubbard} model},
 volume = {62},
 url = {https://doi.org/10.1103/physrevlett.62.1201},
 doi = {10.1103/physrevlett.62.1201},
 abstract = {In the attractive Hubbard Model (and some extended versions of it), the ground state is proved to have spin angular momentum S=0 for every (even) electron filling. In the repulsive case, and with a bipartite lattice and a half-filled band, the ground state has S=(1/2$\parallel $B$\parallel $-$\parallel $A$\parallel $$\parallel $, where $\parallel $B$\parallel $ ($\parallel $A$\parallel $) is the number of sites in the B (A) sublattice. In both cases the ground state is unique. The second theorem confirms an old, unproved conjecture in the $\parallel $B$\parallel $=$\parallel $A$\parallel $ case and yields, with $\parallel $B$\parallel $$\neq$$\parallel $A$\parallel $, the first provable example of itinerant-electron ferromagnetism. The theorems hold in all dimensions without even the necessity of a periodic lattice structure.},
 number = {10},
 urldate = {2020-05-12},
 journal = {Phys. Rev. Lett.},
 month = mar,
 year = {1989},
 pages = {1201-1204},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0031-9007},
}

@article{wang_current-driven_2019,
 author = {Wang, Xiao and Tang, Jian and Xia, Xiuxin and He, Congli and Zhang, Junwei and Liu, Yizhou and Wan, Caihua and Fang, Chi and Guo, Chenyang and Yang, Wenlong and Guang, Yao and Zhang, Xiaomin and Xu, Hongjun and Wei, Jinwu and Liao, Mengzhou and Lu, Xiaobo and Feng, Jiafeng and Li, Xiaoxi and Peng, Yong and Wei, Hongxiang and Yang, Rong and Shi, Dongxia and Zhang, Xixiang and Han, Zheng and Zhang, Zhidong and Zhang, Guangyu and Yu, Guoqiang and Han, Xiufeng},
 title = {Current-driven magnetization switching in a van der {Waals} ferromagnet {Fe3GeTe2}},
 volume = {5},
 copyright = {Copyright \copyright\ 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).. This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.},
 issn = {2375-2548},
 url = {https://doi.org/10.1126/sciadv.aaw8904},
 doi = {10.1126/sciadv.aaw8904},
 abstract = {The recent discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) materials holds promises for spintronic devices with exceptional properties. However, to use 2D vdW magnets for building spintronic nanodevices such as magnetic memories, key challenges remain in terms of effectively switching the magnetization from one state to the other electrically. Here, we devise a bilayer structure of Fe3GeTe2/Pt, in which the magnetization of few-layered Fe3GeTe2 can be effectively switched by the spin-orbit torques (SOTs) originated from the current flowing in the Pt layer. The effective magnetic fields corresponding to the SOTs are further quantitatively characterized using harmonic measurements. Our demonstration of the SOT-driven magnetization switching in a 2D vdW magnet could pave the way for implementing low-dimensional materials in the next-generation spintronic applications. Spin-orbit torque flips the perpendicular magnetic moment of a 2D van der Waals magnet. Spin-orbit torque flips the perpendicular magnetic moment of a 2D van der Waals magnet.},
 number = {8},
 urldate = {2020-05-12},
 journal = {Sci. Adv.},
 month = aug,
 year = {2019},
 pages = {eaaw8904},
 source = {Crossref},
 publisher = {American Association for the Advancement of Science (AAAS)},
}

@article{soumyanarayanan_emergent_2016,
 author = {Soumyanarayanan, Anjan and Reyren, Nicolas and Fert, Albert and Panagopoulos, Christos},
 title = {Emergent phenomena induced by spin--orbit coupling at surfaces and interfaces},
 volume = {539},
 copyright = {2016 Macmillan Publishers Limited, part of Springer Nature. All rights reserved.},
 issn = {0028-0836, 1476-4687},
 url = {https://doi.org/10.1038/nature19820},
 doi = {10.1038/nature19820},
 abstract = {The interplay between spin--orbit coupling and two-dimensionality has led to the emergence of new phases of matter, such as spin-polarized surface states in topological insulators, interfacial chiral spin interactions, and magnetic skyrmions in thin films, with great potential for spin-based devices.},
 number = {7630},
 urldate = {2020-05-12},
 journal = {Nature},
 month = nov,
 year = {2016},
 pages = {509-517},
 source = {Crossref},
 publisher = {Springer Science and Business Media LLC},
}

@article{liu_spin-torque_2011,
 author = {Liu, Luqiao and Moriyama, Takahiro and Ralph, D.C. and Buhrman, R.A.},
 title = {Spin-Torque Ferromagnetic Resonance Induced by the Spin Hall Effect},
 volume = {106},
 url = {https://doi.org/10.1103/physrevlett.106.036601},
 doi = {10.1103/physrevlett.106.036601},
 abstract = {We demonstrate that the spin Hall effect in a thin film with strong spin-orbit scattering can excite magnetic precession in an adjacent ferromagnetic film. The flow of alternating current through a Pt/NiFe bilayer generates an oscillating transverse spin current in the Pt, and the resultant transfer of spin angular momentum to the NiFe induces ferromagnetic resonance dynamics. The Oersted field from the current also generates a ferromagnetic resonance signal but with a different symmetry. The ratio of these two signals allows a quantitative determination of the spin current and the spin Hall angle.},
 number = {3},
 urldate = {2020-05-12},
 journal = {Phys. Rev. Lett.},
 month = jan,
 year = {2011},
 pages = {036601},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0031-9007, 1079-7114},
}

@article{nunez_theory_2006,
 author = {Núñez, A.S. and Duine, R.A. and Haney, Paul and MacDonald, A.H.},
 title = {Theory of spin torques and giant magnetoresistance in antiferromagnetic metals},
 volume = {73},
 url = {https://doi.org/10.1103/physrevb.73.214426},
 doi = {10.1103/physrevb.73.214426},
 abstract = {Spintronics in ferromagnetic metals is built on a complementary set of phenomena in which magnetic configurations influence transport coefficients and transport currents alter magnetic configurations. Here, we propose that corresponding effects occur in circuits containing antiferromagnetic metals. The critical current for order parameter orientation switching can be smaller in the antiferromagnetic case because of the absence of shape anisotropy and because spin torques can act through the entire volume of an antiferromagnet. We discuss possible applications of antiferromagnetic metal spintronics.},
 number = {21},
 urldate = {2020-05-12},
 journal = {Phys. Rev. B},
 month = jun,
 year = {2006},
 pages = {214426},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {1098-0121, 1550-235X},
}

@article{dzyaloshinsky_thermodynamic_1958,
 author = {Dzyaloshinsky, I.},
 title = {A thermodynamic theory of ``weak'' ferromagnetism of antiferromagnetics},
 volume = {4},
 issn = {0022-3697},
 url = {https://doi.org/10.1016/0022-3697(58)90076-3},
 doi = {10.1016/0022-3697(58)90076-3},
 abstract = {A thermodynamic theory of ``weak'' ferromagnetism of $\alpha$-Fe2O3, MnCO3 and CoCO3 is developed on the basis of landau's theory of phase transitions of the second kind. It is shown that the ``weak'' ferromagnetism is due to the relativistic spin-lattice and the magnetic dipole interactions. A strong dependence of the properties of ``weak'' ferromagnetics on the magnetic crystalline symmetry is noted and the behaviour of these ferromagnetics in a magnetic field is studied.},
 number = {4},
 urldate = {2020-05-12},
 journal = {J. Phys. Chem. Solids},
 month = jan,
 year = {1958},
 pages = {241-255},
 source = {Crossref},
 publisher = {Elsevier BV},
}

@article{moriya_anisotropic_1960,
 author = {Moriya, Tôru},
 title = {Anisotropic Superexchange Interaction and Weak Ferromagnetism},
 volume = {120},
 url = {https://doi.org/10.1103/physrev.120.91},
 doi = {10.1103/physrev.120.91},
 abstract = {A theory of anisotropic superexchange interaction is developed by extending the Anderson theory of superexchange to include spin-orbit coupling. The antisymmetric spin coupling suggested by Dzialoshinski from purely symmetry grounds and the symmetric pseudodipolar interaction are derived. Their orders of magnitudes are estimated to be ($\Delta$gg) and ($\Delta$gg)2 times the isotropic superexchange energy, respectively. Higher order spin couplings are also discussed. As an example of antisymmetric spin coupling the case of CuCl2$\cdot$2H2O is illustrated. In CuCl2$\cdot$2H2O, a spin arrangement which is different from one accepted so far is proposed. This antisymmetric interaction is shown to be responsible for weak ferromagnetism in $\alpha$-Fe2O3, MnCO3, and CrF3. The paramagnetic susceptibility perpendicular to the trigonal axis is expected to increase very sharply near the N\'eel temperature as the temperature is lowered, as was actually observed in CrF3.},
 number = {1},
 urldate = {2020-05-12},
 journal = {Phys. Rev.},
 month = oct,
 year = {1960},
 pages = {91-98},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0031-899X},
}

@article{moriya_new_1960,
 author = {Moriya, Tôru},
 title = {New Mechanism of Anisotropic Superexchange Interaction},
 volume = {4},
 url = {https://doi.org/10.1103/physrevlett.4.228},
 doi = {10.1103/physrevlett.4.228},
 abstract = {DOI:https://doi.org/10.1103/PhysRevLett.4.228},
 number = {5},
 urldate = {2020-05-12},
 journal = {Phys. Rev. Lett.},
 month = mar,
 year = {1960},
 pages = {228-230},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0031-9007},
}

@article{ado_chiral_2020,
 author = {Ado, I.A. and Qaiumzadeh, A. and Brataas, A. and Titov, M.},
 title = {Chiral ferromagnetism beyond {Lifshitz} invariants},
 volume = {101},
 url = {https://doi.org/10.1103/physrevb.101.161403},
 doi = {10.1103/physrevb.101.161403},
 abstract = {We consider a contribution wch to the micromagnetic energy density that is linear with respect to the first spatial derivatives of the local magnetization direction. For a generalized two-dimensional Rashba ferromagnet, we present a microscopic analysis of this contribution and, in particular, demonstrate that it cannot be expressed through Lifshitz invariants beyond the linear order in the spin-orbit coupling (SOC) strength. Terms in wch beyond Lifshitz invariants emerge as a result of spin rotation symmetry breaking caused by SOC. The effects of these terms on the phase diagram of magnetic states and spin-wave dispersion are discussed. Finally, we present a classification of terms in wch, allowed by symmetry, for each crystallographic point group.},
 number = {16},
 urldate = {2020-05-12},
 journal = {Phys. Rev. B},
 month = apr,
 year = {2020},
 pages = {161403},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {2469-9950, 2469-9969},
}

@article{hellman_interface-induced_2017,
 author = {Hellman, Frances and Hoffmann, Axel and Tserkovnyak, Yaroslav and Beach, Geoffrey S.D. and Fullerton, Eric E. and Leighton, Chris and MacDonald, Allan H. and Ralph, Daniel C. and Arena, Dario A. and Dürr, Hermann A. and Fischer, Peter and Grollier, Julie and Heremans, Joseph P. and Jungwirth, Tomas and Kimel, Alexey V. and Koopmans, Bert and Krivorotov, Ilya N. and May, Steven J. and Petford-Long, Amanda K. and Rondinelli, James M. and Samarth, Nitin and Schuller, Ivan K. and Slavin, Andrei N. and Stiles, Mark D. and Tchernyshyov, Oleg and Thiaville, André and Zink, Barry L.},
 title = {Interface-induced phenomena in magnetism},
 volume = {89},
 issn = {0034-6861, 1539-0756},
 url = {https://doi.org/10.1103/revmodphys.89.025006},
 doi = {10.1103/revmodphys.89.025006},
 number = {2},
 urldate = {2020-05-12},
 journal = {Rev. Mod. Phys.},
 month = jun,
 year = {2017},
 pages = {025006},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
}

@article{weise_kernel_2006,
 author = {Weiße, Alexander and Wellein, Gerhard and Alvermann, Andreas and Fehske, Holger},
 title = {The kernel polynomial method},
 volume = {78},
 url = {https://doi.org/10.1103/revmodphys.78.275},
 doi = {10.1103/revmodphys.78.275},
 abstract = {Efficient and stable algorithms for the calculation of spectral quantities and correlation functions are some of the key tools in computational condensed-matter physics. In this paper basic properties and recent developments of Chebyshev expansion based algorithms and the kernel polynomial method are reviewed. Characterized by a resource consumption that scales linearly with the problem dimension these methods enjoyed growing popularity over the last decade and found broad application not only in physics. Representative examples from the fields of disordered systems, strongly correlated electrons, electron-phonon interaction, and quantum spin systems are discussed in detail. In addition, an illustration on how the kernel polynomial method is successfully embedded into other numerical techniques, such as cluster perturbation theory or Monte Carlo simulation, is provided.},
 number = {1},
 urldate = {2020-05-11},
 journal = {Rev. Mod. Phys.},
 month = mar,
 year = {2006},
 pages = {275-306},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0034-6861, 1539-0756},
}

@article{anderson_resonating_1987,
 author = {Anderson, P.W.},
 title = {The Resonating Valence Bond State in {La2CuO4} and Superconductivity},
 volume = {235},
 copyright = {1987 by the American Association for the Advancement of Science.},
 issn = {0036-8075, 1095-9203},
 url = {https://doi.org/10.1126/science.235.4793.1196},
 doi = {10.1126/science.235.4793.1196},
 abstract = {The oxide superconductors, particularly those recently discovered that are based on La2CuO4, have a set of peculiarities that suggest a common, unique mechanism: they tend in every case to occur near a metal-insulator transition into an odd-electron insulator with peculiar magnetic properties. This insulating phase is proposed to be the long-sought "resonating-valence-bond" state or "quantum spin liquid" hypothesized in 1973. This insulating magnetic phase is favored by low spin, low dimensionality, and magnetic frustration. The preexisting magnetic singlet pairs of the insulating state become charged superconducting pairs when the insulator is doped sufficiently strongly. The mechanism for superconductivity is hence predominantly electronic and magnetic, although weak phonon interactions may favor the state. Many unusual properties are predicted, especially of the insulating state.},
 number = {4793},
 urldate = {2020-05-10},
 journal = {Science},
 month = mar,
 year = {1987},
 pmid = {17818979},
 pages = {1196-1198},
 source = {Crossref},
 publisher = {American Association for the Advancement of Science (AAAS)},
}

@article{zhang_effective_1988,
 author = {Zhang, F.C. and Rice, T.M.},
 title = {Effective {Hamiltonian} for the superconducting Cu oxides},
 volume = {37},
 url = {https://doi.org/10.1103/physrevb.37.3759},
 doi = {10.1103/physrevb.37.3759},
 abstract = {Although assuming that doping creates holes primarily on oxygen sites, we derive explicitly a single-band effective Hamiltonian for the high-Tc Cu-oxide superconductors. Cu-O hybridization strongly binds a hole on each square of O atoms to the central Cu2+ ion to form a local singlet. This moves through the lattice in a similar way as a hole in the single-band effective Hamiltonian of the strongly interacting Hubbard model., This article appears in the following collection:},
 number = {7},
 urldate = {2020-05-10},
 journal = {Phys. Rev. B},
 month = mar,
 year = {1988},
 pages = {3759-3761},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0163-1829},
}

@article{jones_how_2018,
 author = {Jones, Nicola},
 title = {How to stop data centres from gobbling up the world's electricity},
 volume = {561},
 copyright = {2020 Nature},
 url = {https://doi.org/10.1038/d41586-018-06610-y},
 doi = {10.1038/d41586-018-06610-y},
 abstract = {The energy-efficiency drive at the information factories that serve us Facebook, Google and Bitcoin.},
 number = {7722},
 urldate = {2020-05-10},
 journal = {Nature},
 month = sep,
 year = {2018},
 pages = {163-166},
 source = {Crossref},
 publisher = {Springer Science and Business Media LLC},
 issn = {0028-0836, 1476-4687},
}

@article{puebla_spintronic_2020,
 author = {Puebla, Jorge and Kim, Junyeon and Kondou, Kouta and Otani, Yoshichika},
 title = {Spintronic devices for energy-efficient data storage and energy harvesting},
 volume = {1},
 copyright = {2020 The Author(s)},
 issn = {2662-4443},
 url = {https://doi.org/10.1038/s43246-020-0022-5},
 doi = {10.1038/s43246-020-0022-5},
 abstract = {The current surge in data generation necessitates devices that can store and analyze data in an energy efficient way. This Review summarizes and discusses developments on the use of spintronic devices for energy-efficient data storage and logic applications, and energy harvesting based on spin.},
 number = {1},
 urldate = {2020-05-10},
 journal = {Comms. Mater.},
 month = may,
 year = {2020},
 pages = {1--9},
 source = {Crossref},
 publisher = {Springer Science and Business Media LLC},
}

@article{binasch_enhanced_1989,
 author = {Binasch, G. and Grünberg, P. and Saurenbach, F. and Zinn, W.},
 title = {Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange},
 volume = {39},
 url = {https://doi.org/10.1103/physrevb.39.4828},
 doi = {10.1103/physrevb.39.4828},
 abstract = {The electrical resistivity of Fe-Cr-Fe layers with antiferromagnetic interlayer exchange increases when the magnetizations of the Fe layers are aligned antiparallel. The effect is much stronger than the usual anisotropic magnetoresistance and further increases in structures with more than two Fe layers. It can be explained in terms of spin-flip scattering of conduction electrons caused by the antiparallel alignment of the magnetization.},
 number = {7},
 urldate = {2020-05-10},
 journal = {Phys. Rev. B},
 month = mar,
 year = {1989},
 pages = {4828-4830},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0163-1829},
}

@article{baibich_giant_1988,
 author = {Baibich, M.N. and Broto, J.M. and Fert, A. and Van Dau, F. Nguyen and Petroff, F. and Etienne, P. and Creuzet, G. and Friederich, A. and Chazelas, J.},
 title = {Giant Magnetoresistance of {(001)Fe/(001)Cr} Magnetic Superlattices},
 volume = {61},
 url = {https://doi.org/10.1103/physrevlett.61.2472},
 doi = {10.1103/physrevlett.61.2472},
 abstract = {We have studied the magnetoresistance of (001)Fe/(001)Cr superlattices prepared by molecularbeam epitaxy. A huge magnetoresistance is found in superlattices with thin Cr layers: For example, with tCr=9 \AA , at T=4.2 K, the resistivity is lowered by almost a factor of 2 in a magnetic field of 2 T. We ascribe this giant magnetoresistance to spin-dependent transmission of the conduction electrons between Fe layers through Cr layers., This article appears in the following collection:},
 number = {21},
 urldate = {2020-05-10},
 journal = {Phys. Rev. Lett.},
 month = nov,
 year = {1988},
 pages = {2472-2475},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0031-9007},
}

@misc{mccleanreport,
 author = {{IC Insights, Inc.}},
 title = {{The {McClean} Report}},
 howpublished = {\url {https://www.icinsights.com/reports/mcclean-report/}},
 month = jan,
 year = {2020},
}

@misc{data_management_policy,
 author = {{Institute for Molecules and Materials, Radboud University}},
 title = {{Research Data Management Policy of the Institute for Molecules and Materials}},
 howpublished = {\url {https://www.ru.nl/publish/pages/915335/rdm_policy_imm.pdf}},
 month = may,
 year = {2020},
}

@article{shen_strain_2016,
 author = {Shen, Tingting and Penumatcha, Ashish V. and Appenzeller, Joerg},
 title = {Strain Engineering for Transition Metal Dichalcogenides Based Field Effect Transistors},
 volume = {10},
 issn = {1936-0851, 1936-086X},
 url = {https://doi.org/10.1021/acsnano.6b01149},
 doi = {10.1021/acsnano.6b01149},
 abstract = {Using electrical characteristics from three-terminal field-effect transistors (FETs), we demonstrate substantial strain induced band gap tunability in transition metal dichalcogenides (TMDs) in line with theoretical predictions and optical experiments. Devices were fabricated on flexible substrates, and a cantilever sample holder was used to apply uniaxial tensile strain to the various multilayer TMD FETs. Analyzing in particular transfer characteristics, we argue that the modified device characteristics under strain are clear evidence of a band gap reduction of 100 meV in WSe2 under 1.35\% uniaxial tensile strain at room temperature. Furthermore, the obtained device characteristics imply that the band gap does not shrink uniformly under strain relative to a reference potential defined by the source/drain contacts. Instead, the band gap change is only related to a change of the conduction band edge of WSe2, resulting in a decrease in the Schottky barrier (SB) for electrons without any change for hole injection into the valence band. Simulations of SB device characteristics are employed to explain this point and to quantify our findings. Last, our experimental results are compared with DFT calculations under strain showing excellent agreement between theoretical predictions and the experimental data presented here.},
 number = {4},
 urldate = {2020-05-08},
 journal = {ACS Nano},
 month = apr,
 year = {2016},
 pages = {4712-4718},
 source = {Crossref},
 publisher = {American Chemical Society (ACS)},
}

@article{chittari_carrier-_2020,
 author = {Chittari, Bheema Lingam and Lee, Dongkyu and Banerjee, Nepal and MacDonald, Allan H. and Hwang, Euyheon and Jung, Jeil},
 title = {Carrier- and strain-tunable intrinsic magnetism in two-dimensional {MAX3} transition metal chalcogenides},
 volume = {101},
 url = {https://doi.org/10.1103/physrevb.101.085415},
 doi = {10.1103/physrevb.101.085415},
 abstract = {We present a density functional theory study of the carrier-density and strain dependence of magnetic order in two-dimensional (2D) MAX3(M = V, Cr, Mn, Fe, Co, Ni; A = Si, Ge, Sn; and X = S, Se, Te) transition metal trichalcogenides. Our ab initio calculations show that this class of compounds includes wide and narrow gap semiconductors, metals, and half-metals, and that most of these compounds are magnetic. Although antiferromagnetic order is most common, ferromagnetism is predicted in MSiSe3 for M = Mn and Ni; in MSiTe3 for M = V and Ni; in MnGeSe3; MGeTe3 for M = Cr, Mn, and Ni; in FeSnS3; and in MSnTe3 for M = V, Mn, and Fe. Among these compounds CrGeTe3,VSnTe3, and CrSnTe3 are ferromagnetic semiconductors. Our calculations suggest that the competition between antiferromagnetic and ferromagnetic order can be substantially altered by strain engineering, and in the semiconductor case also by gating. The associated critical temperatures can be enhanced by means of carrier doping and strains.},
 number = {8},
 urldate = {2020-05-08},
 journal = {Phys. Rev. B},
 month = feb,
 year = {2020},
 pages = {085415},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {2469-9950, 2469-9969},
}

@article{cayssol_introduction_2013,
 author = {Cayssol, Jérôme},
 series = {Topological insulators / {Isolants} topologiques},
 title = {Introduction to Dirac materials and topological insulators},
 volume = {14},
 issn = {1631-0705},
 url = {https://doi.org/10.1016/j.crhy.2013.09.012},
 doi = {10.1016/j.crhy.2013.09.012},
 abstract = {We present a short pedagogical introduction to the physics of Dirac materials, restricted to graphene and two-dimensional topological insulators. We start with a brief reminder of the Dirac and Weyl equations in the particle physics context. Turning to condensed matter systems, semimetallic graphene and various Dirac insulators are introduced, including the Haldane and the Kane--Mele topological insulators. We also discuss briefly experimental realizations in materials with strong spin--orbit coupling. R\'esum\'e Nous pr\'esentons dans cet article une courte introduction didactique \`a la physique des mat\'eriaux de Dirac, restreinte au graph\`ene et \`a des isolants topologiques en deux dimensions. Nous commen\c cons par un bref rappel des \'equations de Dirac et de Weyl dans le contexte de la physique des particules. Abordant les syst\`emes relatifs \`a la mati\`ere condens\'ee, le graph\`ene semi-m\'etallique et divers isolants de Dirac sont pr\'esent\'es, parmi lesquels les isolants topologiques de Haldane et de Kane--Mele. Nous discutons aussi bri\`evement les r\'ealisations exp\'erimentales avec des mat\'eriaux \`a fort couplage spin--orbite.},
 number = {9-10},
 urldate = {2020-05-07},
 journal = {C. R. Phys.},
 month = nov,
 year = {2013},
 keywords = {Dirac fermions, Edge modes, \'Etats de bord, Fermions de Dirac, Graphene, Graph\`ene, Isolants topologiques, Topological insulators},
 pages = {760-778},
 source = {Crossref},
 publisher = {Elsevier BV},
}

@article{qi_quantum_2009,
 author = {Qi, Xiao-Liang and Zhang, Shou-Cheng},
 title = {The quantum spin Hall effect and topological insulators},
 volume = {63},
 issn = {0031-9228, 1945-0699},
 url = {https://doi.org/10.1063/1.3293411},
 doi = {10.1063/1.3293411},
 number = {1},
 urldate = {2020-05-07},
 journal = {Phys. Today},
 month = jan,
 year = {2010},
 pages = {33-38},
 source = {Crossref},
 publisher = {AIP Publishing},
}

@article{konig_quantum_2008,
 author = {König, Markus and Buhmann, Hartmut and W. Molenkamp, Laurens and Hughes, Taylor and Liu, Chao-Xing and Qi, Xiao-Liang and Zhang, Shou-Cheng},
 title = {The Quantum Spin Hall Effect: {Theory} and Experiment},
 volume = {77},
 issn = {0031-9015, 1347-4073},
  url = {https://doi.org/10.1143/jpsj.77.031007},
 doi = {10.1143/jpsj.77.031007},
 abstract = {The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Recently, a new class of topological insulators has been proposed. These topological insulators have an insulating gap in the bulk, but have topologically protected edge states due to the time reversal symmetry. In two dimensions the helical edge states give rise to the quantum spin Hall (QSH) effect, in the absence of any external magnetic field. Here we review a recent theory which predicts that the QSH state can be realized in HgTe/CdTe semiconductor quantum wells (QWs). By varying the thickness of the QW, the band structure changes from a normal to an ``inverted'' type at a critical thickness d c . We present an analytical solution of the helical edge states and explicitly demonstrate their topological stability. We also review the recent experimental observation of the QSH state in HgTe/(Hg,Cd)Te QWs. We review both the fabrication of the sample and the experimental setup. For thin QWs with well width d QW {\textless }6.3 nm, the insulating regime shows the conventional behavior of vanishingly small conductance at low temperature. However, for thicker QWs ( d QW {\textgreater }6.3 nm), the nominally insulating regime shows a plateau of residual conductance close to 2 e 2 / h . The residual conductance is independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance is destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, d c =6.3 nm, is also independently determined from the occurrence of a magnetic field induced insulator to metal transition.},
 number = {3},
 urldate = {2020-05-07},
 journal = {J. Phys. Soc. Jpn.},
 month = mar,
 year = {2008},
 pages = {031007},
 source = {Crossref},
 publisher = {Physical Society of Japan},
}

@incollection{pu_chapter_2020,
 author = {Pu, Yong},
 editor = {Liu, Wenqing and Xu, Yongbing},
 series = {Materials {Today}},
 title = {Charge-spin conversion in {2D} systems},
 isbn = {9780081021545},
 url = {https://doi.org/10.1016/b978-0-08-102154-5.00004-7},
 abstract = {Charge-spin conversion (CSC) is a process to convert electrical signal to spin signal and vice versa, which is fundamentally the interplay between charge and spin degrees of freedoms of electron. In modern spintronics, CSC is widely used to control the novel properties of materials and generate new functionalities of devices, due to the fact that the electrical operation is still the most efficient method to control various spintronic devices and compatible with modern technologies of electronics. The efficiency of CSC is in principle determined by the material property and the device structure; therefore tremendous efforts are put to explore new materials and new architectures. The 2D systems can serve as ideal material platforms to generate high-speed, high-density, and low-cost spintronic devices, due to their exotic spin properties. The CSC effect in 2D systems has been becoming one of the most emerging research fields of spintronics.},
 urldate = {2020-05-06},
 booktitle = {Spintronic 2D Materials},
 publisher = {Elsevier},
 month = jan,
 year = {2020},
 doi = {10.1016/b978-0-08-102154-5.00004-7},
 keywords = {2D systems, Basic operations on spins, Charge-spin conversion, New functionalities, New spintronic devices, Spin detection, Spin generation},
 pages = {125-136},
 source = {Crossref},
}

@book{book_recent_advancements,
 author = {Wang, X.T. and Chen, H. and Khenata, Rabah},
 year = {2019},
 month = may,
 pages = {},
 title = {Recent Advances in Novel Materials for Future Spintronics},
 isbn = {9783038979777, 9783038979760},
 doi = {10.3390/books978-3-03897-977-7},
 source = {Crossref},
 url = {https://doi.org/10.3390/books978-3-03897-977-7},
 publisher = {MDPI},
}

@article{novoselov_two-dimensional_2005-1,
 author = {Novoselov, K.S. and Jiang, D. and Schedin, F. and Booth, T.J. and Khotkevich, V.V. and Morozov, S.V. and Geim, A.K.},
 title = {Two-dimensional atomic crystals},
 volume = {102},
 copyright = {Copyright \copyright\ 2005, The National Academy of Sciences},
 issn = {0027-8424, 1091-6490},
 url = {https://doi.org/10.1073/pnas.0502848102},
 doi = {10.1073/pnas.0502848102},
 abstract = {We report free-standing atomic crystals that are strictly 2D and can be viewed as individual atomic planes pulled out of bulk crystals or as unrolled single-wall nanotubes. By using micromechanical cleavage, we have prepared and studied a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides. These atomically thin sheets (essentially gigantic 2D molecules unprotected from the immediate environment) are stable under ambient conditions, exhibit high crystal quality, and are continuous on a macroscopic scale.},
 number = {30},
 urldate = {2020-05-06},
 journal = {Proc. Natl. Acad. Sci. U.S.A.},
 month = jul,
 year = {2005},
 pmid = {16027370},
 keywords = {graphene, layered material},
 pages = {10451-10453},
 source = {Crossref}
 }

@article{novoselov_electric_2004,
 author = {Novoselov, K.S.},
 title = {Electric Field Effect in Atomically Thin Carbon Films},
 volume = {306},
 issn = {0036-8075, 1095-9203},
 url = {https://doi.org/10.1126/science.1102896},
 doi = {10.1126/science.1102896},
 number = {5696},
 urldate = {2020-05-06},
 journal = {Science},
 month = oct,
 year = {2004},
 pages = {666-669},
 source = {Crossref},
 publisher = {American Association for the Advancement of Science (AAAS)},
}

@article{feng_two-dimensional_2016,
 author = {Feng, Wei and Long, Peng and Feng, Yiyu and Li, Yu},
 title = {Two-Dimensional Fluorinated Graphene: {Synthesis,} Structures, Properties and Applications},
 volume = {3},
 copyright = {\copyright\ 2016 The Authors. Published by WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
 issn = {2198-3844},
  url = {https://doi.org/10.1002/advs.201500413},
 doi = {10.1002/advs.201500413},
 abstract = {Fluorinated graphene, an up-rising member of the graphene family, combines a two-dimensional layer-structure, a wide bandgap, and high stability and attracts significant attention because of its unique nanostructure and carbon--fluorine bonds. Here, we give an extensive review of recent progress on synthetic methods and C--F bonding; additionally, we present the optical, electrical and electronic properties of fluorinated graphene and its electrochemical/biological applications. Fluorinated graphene exhibits various types of C--F bonds (covalent, semi-ionic, and ionic bonds), tunable F/C ratios, and different configurations controlled by synthetic methods including direct fluorination and exfoliation methods. The relationship between the types/amounts of C--F bonds and specific properties, such as opened bandgap, high thermal and chemical stability, dispersibility, semiconducting/insulating nature, magnetic, self-lubricating and mechanical properties and thermal conductivity, is discussed comprehensively. By optimizing the C--F bonding character and F/C ratios, fluorinated graphene can be utilized for energy conversion and storage devices, bioapplications, electrochemical sensors and amphiphobicity. Based on current progress, we propose potential problems of fluorinated graphene as well as the future challenge on the synthetic methods and C-F bonding character. This review will provide guidance for controlling C--F bonds, developing fluorine-related effects and promoting the application of fluorinated graphene.},
 number = {7},
 urldate = {2020-05-06},
 journal = {Adv. Sci.},
 year = {2016},
 keywords = {C--F bonds, F/C ratio, fluorinated graphene, fluorographene},
 pages = {1500413},
 source = {Crossref},
 publisher = {Wiley},
 month = mar,
}

@article{zhang_two_2017,
 author = {Zhang, Kailiang and Feng, Yulin and Wang, Fang and Yang, Zhengchun and Wang, John},
 title = {Two dimensional hexagonal boron nitride {(2D}-{hBN):} {Synthesis,} properties and applications},
 volume = {5},
 issn = {2050-7526, 2050-7534},
  url = {https://doi.org/10.1039/c7tc04300g},
 doi = {10.1039/c7tc04300g},
 abstract = {Two dimensional hexagonal boron nitride (2D-hBN), an isomorph of graphene with a very similar layered structure, is uniquely featured by its exotic opto-electrical properties together with mechanical robustness, thermal stability, and chemical inertness. It is thus extensively studied for application in field effect transistors (FETs), tunneling devices, deep UV emitters and detectors, photoelectric devices, and nanofillers. 2D-hBN is considered as one of the most promising materials that can be integrated with other 2D materials, such as graphene and transition metal dichalcogenides (TMDCs), for the next generation microelectronic and other technologies. Although it is by itself an insulator, it can well be tuned by several strategies in terms of properties and functionalities, such as by doping, substitution, functionalization and hybridization, making 2D-hBN a truly versatile type of functional materials for a wide range of applications. In this review, the distinct structural characteristics of 2D-hBN, doping- and defect-induced variations in energy bands and structures, and resultant properties, are presented. There are a wide variety of processing routes that have been developed for 2D-hBN, including also those for doping, substitution, functionalization and combination with other materials to form heterostructures or h-BNC hybrid nanosheets, which are systematically elaborated for novel functions. The comprehensive overview provides the types of the state-of-the-art 2D-hBN made by new synthesis strategies, where the mainstream approaches include exfoliation, chemical vapor deposition, and gas phase epitaxy, together with several other new methods that have been successfully developed in the past few years. On the basis of the extraordinary electrical and functional properties and thermal--mechanical stability, the applications of hBN-based nanosheets as substrates and dielectrics, passivation layers, and nanofillers in nanodevices and nanocomposites are discussed, together with the peculiar optical and wetting characteristics.},
 number = {46},
 urldate = {2020-05-06},
 journal = {J. Mater. Chem. C},
 month = nov,
 year = {2017},
 pages = {11992-12022},
 source = {Crossref},
 publisher = {Royal Society of Chemistry (RSC)},
}

@article{wang_antiferromagnetic_2017,
 author = {Wang, Jing},
 title = {Antiferromagnetic Dirac semimetals in two dimensions},
 volume = {95},
 url = {https://doi.org/10.1103/physrevb.95.115138},
 doi = {10.1103/physrevb.95.115138},
 abstract = {The search for symmetry-protected two-dimensional (2D) Dirac semimetals analogous to graphene is important both for fundamental and practical interest. The 2D Dirac cones are protected by crystalline symmetries and magnetic ordering may destroy their robustness. Here we propose a general framework to classify stable 2D Dirac semimetals in spin-orbit coupled systems having the combined time-reversal and inversion symmetries, and show the existence of the stable Dirac points in 2D antiferromagnetic semimetals. Compared to 3D Dirac semimetals which fall into two distinct classes, Dirac semimetals in 2D with combined time-reversal and inversion symmetries belong to a single class which is closely related to the nonsymmorphic space-group symmetries. We further provide a concrete model in antiferromagnetic semimetals which supports symmetry-protected 2D Dirac points. The symmetry breaking in such systems leads to 2D chiral topological states such as quantum anomalous Hall insulator and chiral topological superconductor phases.},
 number = {11},
 urldate = {2020-05-06},
 journal = {Phys. Rev. B},
 month = mar,
 year = {2017},
 pages = {115138},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {2469-9950, 2469-9969},
}

@article{shao_zr2si_2018,
 author = {Shao, Xiaofei and Liu, Xiaobiao and Zhang, Xiaoming and Wang, Junru and Zhao, Mingwen},
 title = {{Zr2Si:} {An} antiferromagnetic Dirac {MXene}},
 volume = {20},
 issn = {1463-9076, 1463-9084},
  url = {https://doi.org/10.1039/c7cp08108a},
 doi = {10.1039/c7cp08108a},
 abstract = {MXenes, which constitute a kind of graphene-like material, have been intensively investigated due to their applications in future nanoelectronics technology. These MXenes are either metallic or semiconducting, whereas Dirac cones similar to graphene have rarely been reported. Using first-principles calculations, we proposed a new MXene, namely Zr2Si, whose antiferromagnetic (AFM) ground state exhibited in these calculations anisotropic Dirac cones with Fermi velocities comparable to that in graphene. The Dirac spectrum here was determined to arise mainly from the dx2$-$y2 and dz2 orbitals of Zr atoms. Additionally, the Dirac cones can be gapped when taking the spin--orbit coupling (SOC) and Coulomb repulsive interaction (U) into account, which opens an avenue for using the Zr2Si MXene for electronics applications.},
 number = {6},
 urldate = {2020-05-06},
 journal = {Phys. Chem. Chem. Phys.},
 month = feb,
 year = {2018},
 pages = {3946-3952},
 source = {Crossref},
 publisher = {Royal Society of Chemistry (RSC)},
}

@article{chen_two-dimensional_2017,
 author = {Chen, Zhi-Guo and Wang, Luyang and Song, Yu and Lu, Xingye and Luo, Huiqian and Zhang, Chenglin and Dai, Pengcheng and Yin, Zhiping and Haule, Kristjan and Kotliar, Gabriel},
 title = {Two-Dimensional Massless Dirac Fermions in Antiferromagnetic {AFe2As2} {(A=Ba,Sr)}},
 volume = {119},
 url = {https://doi.org/10.1103/physrevlett.119.096401},
 doi = {10.1103/physrevlett.119.096401},
 abstract = {We report infrared studies of AFe2As2 (A=Ba, Sr), two representative parent compounds of iron-arsenide superconductors, at magnetic fields (B) up to 17.5 T. Optical transitions between Landau levels (LLs) were observed in the antiferromagnetic states of these two parent compounds. Our observation of a $\surd$B dependence of the LL transition energies, the zero-energy intercepts at B=0 T under the linear extrapolations of the transition energies and the energy ratio ($\sim$2.4) between the observed LL transitions, combined with the linear band dispersions in two-dimensional (2D) momentum space obtained by theoretical calculations, demonstrates the existence of massless Dirac fermions in the antiferromagnet BaFe2As2. More importantly, the observed dominance of the zeroth-LL-related absorption features and the calculated bands with extremely weak dispersions along the momentum direction kz indicate that massless Dirac fermions in BaFe2As2 are 2D. Furthermore, we find that the total substitution of the barium atoms in BaFe2As2 by strontium atoms not only maintains 2D massless Dirac fermions in this system, but also enhances their Fermi velocity, which supports that the Dirac points in iron-arsenide parent compounds are topologically protected.},
 number = {9},
 urldate = {2020-05-06},
 journal = {Phys. Rev. Lett.},
 month = aug,
 year = {2017},
 pages = {096401},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0031-9007, 1079-7114},
}

@article{ma_emergence_2020,
 author = {Ma, Junzhang and Wang, Han and Nie, Simin and Yi, Changjiang and Xu, Yuanfeng and Li, Hang and Jandke, Jasmin and Wulfhekel, Wulf and Huang, Yaobo and West, Damien and Richard, Pierre and Chikina, Alla and Strocov, Vladimir N. and Mesot, Joël and Weng, Hongming and Zhang, Shengbai and Shi, Youguo and Qian, Tian and Shi, Ming and Ding, Hong},
 title = {Emergence of Nontrivial Low-Energy Dirac Fermions in Antiferromagnetic {EuCd} 2 As 2},
 volume = {32},
 copyright = {\copyright\ 2020 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
 issn = {0935-9648, 1521-4095},
 url = {https://doi.org/10.1002/adma.201907565},
 doi = {10.1002/adma.201907565},
 abstract = {Parity-time symmetry plays an essential role for the formation of Dirac states in Dirac semimetals. So far, all of the experimentally identified topologically nontrivial Dirac semimetals (DSMs) possess both parity and time reversal symmetry. The realization of magnetic topological DSMs remains a major issue in topological material research. Here, combining angle-resolved photoemission spectroscopy with density functional theory calculations, it is ascertained that band inversion induces a topologically nontrivial ground state in EuCd2As2. As a result, ideal magnetic Dirac fermions with simplest double cone structure near the Fermi level emerge in the antiferromagnetic (AFM) phase. The magnetic order breaks time reversal symmetry, but preserves inversion symmetry. The double degeneracy of the Dirac bands is protected by a combination of inversion, time-reversal, and an additional translation operation. Moreover, the calculations show that a deviation of the magnetic moments from the c-axis leads to the breaking of C3 rotation symmetry, and thus, a small bandgap opens at the Dirac point in the bulk. In this case, the system hosts a novel state containing three different types of topological insulator: axion insulator, AFM topological crystalline insulator (TCI), and higher order topological insulator. The results provide an enlarged platform for the quest of topological Dirac fermions in a magnetic system.},
 number = {14},
 urldate = {2020-05-06},
 journal = {Adv. Mater.},
 year = {2020},
 keywords = {axion insulator, condensed matter physics, higher order topological insulator, magnetic Dirac semimetal},
 pages = {1907565},
 source = {Crossref},
 publisher = {Wiley},
 month = apr,
}

@article{swatek_gapless_2020,
 author = {Swatek, Przemyslaw and Wu, Yun and Wang, Lin-Lin and Lee, Kyungchan and Schrunk, Benjamin and Yan, Jiaqiang and Kaminski, Adam},
 title = {Gapless Dirac surface states in the antiferromagnetic topological insulator {MnBi2Te4}},
 volume = {101},
 url = {https://doi.org/10.1103/physrevb.101.161109},
 doi = {10.1103/physrevb.101.161109},
 abstract = {We used angle-resolved photoemission spectroscopy (ARPES) and density functional theory calculations to study the electronic properties of MnBi2Te4, a material that was predicted to be an intrinsic antiferromagnetic (AFM) topological insulator. In striking contrast to earlier literature showing a full gap opening between two surface band manifolds on the (0001) surface, we observed a gapless Dirac surface state with a Dirac point sitting at EB=$-$280meV. Furthermore, our ARPES data revealed the existence of a second Dirac cone sitting closer to the Fermi level. Surprisingly, these surface states remain intact across the AFM transition. The presence of gapless Dirac states in this material may be caused by different ordering at the surface from the bulk or weaker magnetic coupling between the bulk and surface. Whereas the surface Dirac cones seem to be remarkably insensitive to the AFM ordering most likely due to weak coupling to magnetism, we did observe a splitting of the bulk band accompanying the AFM transition. With a moderately high ordering temperature and interesting gapless Dirac surface states, MnBi2Te4 provides a unique platform for studying the interplay between magnetic ordering and topology.},
 number = {16},
 urldate = {2020-05-06},
 journal = {Phys. Rev. B},
 month = apr,
 year = {2020},
 pages = {161109},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {2469-9950, 2469-9969},
}

@article{hogl_quantum_2020,
 author = {Högl, Petra and Frank, Tobias and Zollner, Klaus and Kochan, Denis and Gmitra, Martin and Fabian, Jaroslav},
 title = {Quantum Anomalous Hall Effects in Graphene from Proximity-Induced Uniform and Staggered Spin-Orbit and Exchange Coupling},
 volume = {124},
 url = {https://doi.org/10.1103/physrevlett.124.136403},
 doi = {10.1103/physrevlett.124.136403},
 abstract = {We investigate an effective model of proximity modified graphene (or symmetrylike materials) with broken time-reversal symmetry. We predict the appearance of quantum anomalous Hall phases by computing bulk band gap and Chern numbers for benchmark combinations of system parameters. Allowing for staggered exchange field enables quantum anomalous Hall effect in flat graphene with Chern number C=1. We explicitly show edge states in zigzag and armchair nanoribbons and explore their localization behavior. Remarkably, the combination of staggered intrinsic spin-orbit and uniform exchange coupling gives topologically protected (unlike in time-reversal systems) pseudohelical states, whose spin is opposite in opposite zigzag edges. Rotating the magnetization from out of plane to in plane makes the system trivial, allowing us to control topological phase transitions. We also propose, using density functional theory, a material platform---graphene on Ising antiferromagnet MnPSe3---to realize staggered exchange (pseudospin Zeeman) coupling.},
 number = {13},
 urldate = {2020-05-06},
 journal = {Phys. Rev. Lett.},
 month = mar,
 year = {2020},
 pages = {136403},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0031-9007, 1079-7114},
}

@article{zollner_purely_2019,
 author = {Dolui, Kapildeb and Petrović, Marko D. and Zollner, Klaus and Plecháč, Petr and Fabian, Jaroslav and Nikolić, Branislav K.},
 title = {Proximity Spin--Orbit Torque on a Two-Dimensional Magnet within van der {Waals} Heterostructure: {Current-driven} Antiferromagnet-to-Ferromagnet Reversible Nonequilibrium Phase Transition in Bilayer {CrI3}},
 url = {https://doi.org/10.1021/acs.nanolett.9b04556},
 abstract = {Using first-principles combined with quantum transport calculations, we predict that graphene sandwiched between insulating monolayers of Cr\$\_2\$Ge\$\_2\$Te\$\_6\$ ferromagnet and WS\$\_2\$ transition-metal dichalcogenide will exhibit spin-orbit torque (SOT) when unpolarized charge current is injected parallel to interfaces of Cr\$\_2\$Ge\$\_2\$Te\$\_6\$/graphene/WS\$\_2\$ van der Waals (vdW) heterostructure. Although graphene by itself is nonmagnetic and it has negligible spin-orbit coupling (SOC), both of which are required for the SOT phenomenon, Cr\$\_2\$Ge\$\_2\$Te\$\_6\$ induces proximity magnetism into graphene while WS\$\_2\$ concurrently imprints valley-Zeeman and Rashba SOCs in it. Unlike SOT on conventional metallic ferromagnets brought into contact with normal materials supplying strong SOC, the predicted SOT on such doubly proximitized graphene can be tuned by up to two orders of magnitude via combined top and back electrostatic gates. The vdW heterostructure also reveals how damping-like component of the SOT vector can arise purely from interfaces and, therefore, even in the absence of any spin Hall current from the bulk of a material with strong SOC. The SOT-driven dynamics of proximity magnetization moves it from out-of-plane to in-plane direction which opens a gap in graphene and leads to zero off current and diverging on/off ratio in such SOT field-effect transistor.},
 urldate = {2020-05-06},
 journal = {Nano Lett.},
 month = mar,
 year = {2020},
 keywords = {Condensed Matter - Mesoscale and Nanoscale Physics},
 annote = {Comment: 7 pages, 5 figures, Supplemental Material available from https://wiki.physics.udel.edu/qttg/Publications},
 doi = {10.1021/acs.nanolett.9b04556},
 number = {4},
 pages = {2288-2295},
 source = {Crossref},
 volume = {20},
 publisher = {American Chemical Society (ACS)},
 issn = {1530-6984, 1530-6992},
}

@article{wang_proximity-induced_2015,
 author = {Wang, Zhiyong and Tang, Chi and Sachs, Raymond and Barlas, Yafis and Shi, Jing},
 title = {Proximity-Induced Ferromagnetism in Graphene Revealed by the Anomalous Hall Effect},
 volume = {114},
 url = {https://doi.org/10.1103/physrevlett.114.016603},
 doi = {10.1103/physrevlett.114.016603},
 abstract = {We demonstrate the anomalous Hall effect (AHE) in single-layer graphene exchange coupled to an atomically flat yttrium iron garnet (YIG) ferromagnetic thin film. The anomalous Hall conductance has magnitude of $\sim$0.09(2e2/h) at low temperatures and is measurable up to $\sim$300 K. Our observations indicate not only proximity-induced ferromagnetism in graphene/YIG with a large exchange interaction, but also enhanced spin-orbit coupling that is believed to be inherently weak in ideal graphene. The proximity-induced ferromagnetic order in graphene can lead to novel transport phenomena such as the quantized AHE which are potentially useful for spintronics.},
 number = {1},
 urldate = {2020-05-05},
 journal = {Phys. Rev. Lett.},
 month = jan,
 year = {2015},
 pages = {016603},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0031-9007, 1079-7114},
}

@article{leutenantsmeyer_proximity_2016,
 author = {Leutenantsmeyer, Johannes Christian and Kaverzin, Alexey A and Wojtaszek, Magdalena and van Wees, Bart J},
 title = {Proximity induced room temperature ferromagnetism in graphene probed with spin currents},
 volume = {4},
 issn = {2053-1583},
 url = {https://doi.org/10.1088/2053-1583/4/1/014001},
 doi = {10.1088/2053-1583/4/1/014001},
 abstract = {We present a direct measurement of the exchange interaction in room temperature ferromagnetic graphene. We study the spin transport in exfoliated graphene on an yttrium--iron--garnet substrate where the observed spin precession clearly indicates the presence and strength of an exchange field that is an unambiguous evidence of induced ferromagnetism. We describe the results with a modified Bloch diffusion equation and extract an average exchange field of the order of 0.2 T. Further, we demonstrate that a proximity induced 2D ferromagnet can efficiently modulate a spin current by controlling the direction of the exchange field. These findings can create a building block for magnetic-gate tuneable spin transport in one-atom-thick spintronic devices.},
 number = {1},
 urldate = {2020-05-05},
 journal = {2D Mater.},
 month = nov,
 year = {2016},
 pages = {014001},
 source = {Crossref},
 publisher = {IOP Publishing},
}

@article{han_graphene_2014,
 author = {Han, Wei and Kawakami, Roland K. and Gmitra, Martin and Fabian, Jaroslav},
 title = {Graphene spintronics},
 volume = {9},
 copyright = {2014 Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved.},
 issn = {1748-3387, 1748-3395},
 url = {https://doi.org/10.1038/nnano.2014.214},
 doi = {10.1038/nnano.2014.214},
 abstract = {Spin-dependent phenomena and applications in graphene and other 2D materials are discussed in this Review.},
 number = {10},
 urldate = {2020-05-05},
 journal = {Nat. Nanotechnol.},
 month = oct,
 year = {2014},
 pages = {794-807},
 source = {Crossref},
 publisher = {Springer Science and Business Media LLC},
}

@article{ugeda_missing_2010,
 author = {Ugeda, M.M. and Brihuega, I. and Guinea, F. and Gómez-Rodríguez, J.M.},
 title = {Missing Atom as a Source of Carbon Magnetism},
 volume = {104},
 url = {https://doi.org/10.1103/physrevlett.104.096804},
 doi = {10.1103/physrevlett.104.096804},
 abstract = {Atomic vacancies have a strong impact in the mechanical, electronic, and magnetic properties of graphenelike materials. By artificially generating isolated vacancies on a graphite surface and measuring their local density of states on the atomic scale, we have shown how single vacancies modify the electronic properties of this graphenelike system. Our scanning tunneling microscopy experiments, complemented by tight-binding calculations, reveal the presence of a sharp electronic resonance at the Fermi energy around each single graphite vacancy, which can be associated with the formation of local magnetic moments and implies a dramatic reduction of the charge carriers' mobility. While vacancies in single layer graphene lead to magnetic couplings of arbitrary sign, our results show the possibility of inducing a macroscopic ferrimagnetic state in multilayered graphene just by randomly removing single C atoms.},
 number = {9},
 urldate = {2020-05-05},
 journal = {Phys. Rev. Lett.},
 month = mar,
 year = {2010},
 pages = {096804},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0031-9007, 1079-7114},
}

@article{han_perspectives_2016,
 author = {Han, Wei},
 title = {Perspectives for spintronics in {2D} materials},
 volume = {4},
 url = {https://doi.org/10.1063/1.4941712},
 doi = {10.1063/1.4941712},
 abstract = {The past decade has been especially creative for spintronics since the (re)discovery of various two dimensional (2D) materials. Due to the unusual physical characteristics, 2D materials have provided new platforms to probe the spin interaction with other degrees of freedom for electrons, as well as to be used for novel spintronics applications. This review briefly presents the most important recent and ongoing research for spintronics in 2D materials.},
 number = {3},
 urldate = {2020-05-05},
 journal = {APL Mater.},
 month = mar,
 year = {2016},
 pages = {032401},
 source = {Crossref},
 publisher = {AIP Publishing},
 issn = {2166-532X},
}

@article{gonzalez-herrero_atomic-scale_2016,
 author = {Gonzalez-Herrero, H. and Gomez-Rodriguez, J.M. and Mallet, P. and Moaied, M. and Palacios, J.J. and Salgado, C. and Ugeda, M.M. and Veuillen, J.-Y. and Yndurain, F. and Brihuega, I.},
 title = {Atomic-scale control of graphene magnetism by using hydrogen atoms},
 volume = {352},
 issn = {0036-8075, 1095-9203},
 url = {https://doi.org/10.1126/science.aad8038},
 doi = {10.1126/science.aad8038},
 number = {6284},
 urldate = {2020-05-05},
 journal = {Science},
 month = apr,
 year = {2016},
 pages = {437-441},
 source = {Crossref},
 publisher = {American Association for the Advancement of Science (AAAS)},
}

@article{dietl_dilute_2014,
 author = {Dietl, Tomasz and Ohno, Hideo},
 title = {Dilute ferromagnetic semiconductors: {Physics} and spintronic structures},
 volume = {86},
  url = {https://doi.org/10.1103/revmodphys.86.187},
 doi = {10.1103/revmodphys.86.187},
 abstract = {This review compiles results of experimental and theoretical studies on thin films and quantum structures of semiconductors with randomly distributed Mn ions, which exhibit spintronic functionalities associated with collective ferromagnetic spin ordering. Properties of p-type Mn-containing III-V as well as II-VI, IV-VI, V2$-$VI3, I-II-V, and elemental group IV semiconductors are described, paying particular attention to the most thoroughly investigated system (Ga,Mn)As that supports the hole-mediated ferromagnetic order up to 190 K for the net concentration of Mn spins below 10\%. Multilayer structures showing efficient spin injection and spin-related magnetotransport properties as well as enabling magnetization manipulation by strain, light, electric fields, and spin currents are presented together with their impact on metal spintronics. The challenging interplay between magnetic and electronic properties in topologically trivial and nontrivial systems is described, emphasizing the entangled roles of disorder and correlation at the carrier localization boundary. Finally, the case of dilute magnetic insulators is considered, such as (Ga,Mn)N, where low-temperature spin ordering is driven by short-ranged superexchange that is ferromagnetic for certain charge states of magnetic impurities.},
 number = {1},
 urldate = {2020-05-05},
 journal = {Rev. Mod. Phys.},
 month = mar,
 year = {2014},
 pages = {187-251},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0034-6861, 1539-0756},
}

@incollection{liu_chapter_2020,
 author = {Liu, Wenqing and Bryan, Matthew T. and Xu, Yongbing},
 editor = {Liu, Wenqing and Xu, Yongbing},
 series = {Materials {Today}},
 title = {Introduction to spintronics and {2D} materials},
 isbn = {9780081021545},
 url = {https://doi.org/10.1016/b978-0-08-102154-5.00001-1},
 abstract = {Spin-based technologies, in the form of magnetic compasses, have existed for thousands of years. However, it is only in the last century that the concept of spin, as a pure quantum phenomenon, was established, paving the way for new applications exploiting its quantum mechanical properties. This chapter introduces the underlying mechanisms behind spin ordering in magnetic materials, particularly in two-dimensional (2D) limit, and reviews historical milestones in the development of ``spintronics'' and electronic devices utilizing spin. Initially studied for fundamental physical interest, spintronic applications quickly came to prominence following the discovery of giant magnetoresistance and the rediscovery of tunneling magnetoresistance in metallic architectures. The desire to integrate these phenomena with the existing semiconductor-based technologies used in the computing industry has inspired intensive study of spintronics within semiconductor materials. Notable developments include the spin field-effect transistor and nonlocal device geometries. Following the discovery of novel electronic properties of graphene, there has been a drive to harness similar properties--with the addition of spin-control--in van der Waals or 2D materials, resulting in several families of 2D magnetic materials known today.},
 urldate = {2020-05-05},
 booktitle = {Spintronic 2D Materials},
 publisher = {Elsevier},
 month = jan,
 year = {2020},
 doi = {10.1016/b978-0-08-102154-5.00001-1},
 keywords = {2D magnetism, 2D materials, Spintronics},
 pages = {1-24},
 source = {Crossref},
}

@book{tsymbal_spintronics_2019,
 author = {Tsymbal, Evgeny Y. and Žutić, Igor},
 title = {Spintronics {{Handbook},} {Second} {{Edition}:} {Spin} {Transport} and {{Magnetism}:} {Volume} {{Three}:} {Nanoscale} {Spintronics} and {Applications}},
 isbn = {978-0-429-80525-7},
  abstract = {Spintronics Handbook, Second Edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications. Features: Presents the most comprehensive reference text for the overlapping fields of spintronics (spin transport) andmagnetism. Covers the full spectrum of materials and structures, from silicon and organic semiconductors to carbon nanotubes, graphene, and engineered nanostructures. Extends coverage of two-dimensional materials beyond graphene, including molybdenum disulfide and study of their spin relaxation mechanisms Includes new dedicated chapters on cutting-edge topics such as spin-orbit torques, topological insulators, half metals, complex oxide materials and skyrmions. Discusses important emerging areas of spintronics with superconductors, spin-wave spintronics, benchmarking of spintronics devices, and theory and experimental approaches to molecular spintronics. Evgeny Tsymbal's research is focused on computational materials science aiming at the understanding of fundamental properties of advanced ferromagnetic and ferroelectric nanostructures and materials relevant to nanoelectronics and spintronics. He is a George Holmes University Distinguished Professor at the Department of Physics and Astronomy of the University of Nebraska-Lincoln (UNL), Director of the UNL's Materials Research Science and Engineering Center (MRSEC), and Director of the multi-institutional Center for NanoFerroic Devices (CNFD). Igor \v Zuti\'c received his Ph.D. in theoretical physics at the University of Minnesota. His work spans a range of topics from high-temperature superconductors and ferromagnetism that can get stronger as the temperature is increased, to prediction of various spin-based devices. He is a recipient of 2006 National Science Foundation CAREER Award, 2005 National Research Council/American Society for Engineering Education Postdoctoral Research Award, and the National Research Council Fellowship (2003-2005). His research is supported by the National Science Foundation, the Office of Naval Research, the Department of Energy, and the Airforce Office of Scientific Research.},
 publisher = {CRC Press},
 month = jun,
 year = {2019},
 keywords = {Science / Mechanics / Thermodynamics, Science / Physics / Condensed Matter, Science / Physics / General, Technology \& Engineering / Electronics / General, Technology \& Engineering / Materials Science / Electronic Materials, Technology \& Engineering / Materials Science / General},
}

@article{radisavljevic_single-layer_2011,
 author = {Radisavljevic, B. and Radenovic, A. and Brivio, J. and Giacometti, V. and Kis, A.},
 title = {Single-layer {MoS2} transistors},
 volume = {6},
 copyright = {2011 Nature Publishing Group},
 issn = {1748-3387, 1748-3395},
 url = {https://doi.org/10.1038/nnano.2010.279},
 doi = {10.1038/nnano.2010.279},
 abstract = {The large bandgap of a single layer of molybdenum disulphide can be exploited to construct transistors with high on/off ratios and high mobilities.},
 number = {3},
 urldate = {2020-05-05},
 journal = {Nat. Nanotechnol.},
 month = jan,
 year = {2011},
 pages = {147-150},
 source = {Crossref},
 publisher = {Springer Science and Business Media LLC},
}

@article{mak_atomically_2010,
 author = {Mak, Kin Fai and Lee, Changgu and Hone, James and Shan, Jie and Heinz, Tony F.},
 title = {Atomically {ThinMoS2:} {A} New Direct-Gap Semiconductor},
 volume = {105},
  url = {https://doi.org/10.1103/physrevlett.105.136805},
 doi = {10.1103/physrevlett.105.136805},
 abstract = {The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,\ldots ,6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure. With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 0.6 eV. This leads to a crossover to a direct-gap material in the limit of the single monolayer. Unlike the bulk material, the MoS2 monolayer emits light strongly. The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 104 compared with the bulk material.},
 number = {13},
 urldate = {2020-05-05},
 journal = {Phys. Rev. Lett.},
 month = sep,
 year = {2010},
 pages = {136805},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0031-9007, 1079-7114},
}

@article{xiao_coupled_2012,
 author = {Xiao, Di and Liu, Gui-Bin and Feng, Wanxiang and Xu, Xiaodong and Yao, Wang},
 title = {Coupled Spin and Valley Physics in Monolayers {ofMoS2and} Other Group-{VI} Dichalcogenides},
 volume = {108},
 url = {https://doi.org/10.1103/physrevlett.108.196802},
 doi = {10.1103/physrevlett.108.196802},
 abstract = {We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials. The spin-valley coupling at the valence-band edges suppresses spin and valley relaxation, as flip of each index alone is forbidden by the valley-contrasting spin splitting. Valley Hall and spin Hall effects coexist in both electron-doped and hole-doped systems. Optical interband transitions have frequency-dependent polarization selection rules which allow selective photoexcitation of carriers with various combination of valley and spin indices. Photoinduced spin Hall and valley Hall effects can generate long lived spin and valley accumulations on sample boundaries. The physics discussed here provides a route towards the integration of valleytronics and spintronics in multivalley materials with strong spin-orbit coupling and inversion symmetry breaking.},
 number = {19},
 urldate = {2020-05-05},
 journal = {Phys. Rev. Lett.},
 month = may,
 year = {2012},
 pages = {196802},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0031-9007, 1079-7114},
}

@article{zeng_valley_2012,
 author = {Zeng, Hualing and Dai, Junfeng and Yao, Wang and Xiao, Di and Cui, Xiaodong},
 title = {Valley polarization in {MoS2} monolayers by optical pumping},
 volume = {7},
 copyright = {2012 Nature Publishing Group},
 issn = {1748-3387, 1748-3395},
 url = {https://doi.org/10.1038/nnano.2012.95},
 doi = {10.1038/nnano.2012.95},
 abstract = {Circularly polarized light has been used to achieve a valley polarization of 30\% in single-layer molybdenum disulphide.},
 number = {8},
 urldate = {2020-05-05},
 journal = {Nat. Nanotechnol.},
 month = jun,
 year = {2012},
 pages = {490-493},
 source = {Crossref},
 publisher = {Springer Science and Business Media LLC},
}

@article{butler_progress_2013,
 author = {Butler, Sheneve Z. and Hollen, Shawna M. and Cao, Linyou and Cui, Yi and Gupta, Jay A. and Gutiérrez, Humberto R. and Heinz, Tony F. and Hong, Seung Sae and Huang, Jiaxing and Ismach, Ariel F. and Johnston-Halperin, Ezekiel and Kuno, Masaru and Plashnitsa, Vladimir V. and Robinson, Richard D. and Ruoff, Rodney S. and Salahuddin, Sayeef and Shan, Jie and Shi, Li and Spencer, Michael G. and Terrones, Mauricio and Windl, Wolfgang and Goldberger, Joshua E.},
 title = {Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene},
 volume = {7},
 issn = {1936-0851, 1936-086X},
 url = {https://doi.org/10.1021/nn400280c},
 doi = {10.1021/nn400280c},
 abstract = {Graphene's success has shown that it is possible to create stable, single and few-atom-thick layers of van der Waals materials, and also that these materials can exhibit fascinating and technologically useful properties. Here we review the state-of-the-art of 2D materials beyond graphene. Initially, we will outline the different chemical classes of 2D materials and discuss the various strategies to prepare single-layer, few-layer, and multilayer assembly materials in solution, on substrates, and on the wafer scale. Additionally, we present an experimental guide for identifying and characterizing single-layer-thick materials, as well as outlining emerging techniques that yield both local and global information. We describe the differences that occur in the electronic structure between the bulk and the single layer and discuss various methods of tuning their electronic properties by manipulating the surface. Finally, we highlight the properties and advantages of single-, few-, and many-layer 2D materials in field-effect transistors, spin- and valley-tronics, thermoelectrics, and topological insulators, among many other applications.},
 number = {4},
 urldate = {2020-05-05},
 journal = {ACS Nano},
 month = mar,
 year = {2013},
 pages = {2898-2926},
 source = {Crossref},
 publisher = {American Chemical Society (ACS)},
}

@article{ma_evidence_2012,
 author = {Ma, Yandong and Dai, Ying and Guo, Meng and Niu, Chengwang and Zhu, Yingtao and Huang, Baibiao},
 title = {Evidence of the Existence of Magnetism in Pristine {VX2} Monolayers {(X} = S, Se) and Their Strain-Induced Tunable Magnetic Properties},
 volume = {6},
 issn = {1936-0851, 1936-086X},
 url = {https://doi.org/10.1021/nn204667z},
 doi = {10.1021/nn204667z},
 abstract = {First-principles calculations are performed to study the electronic and magnetic properties of VX2 monolayers (X = S, Se). Our results unveil that VX2 monolayers exhibit exciting ferromagnetic behavior, offering evidence of the existence of magnetic behavior in pristine 2D monolayers. Furthermore, interestingly, both the magnetic moments and strength of magnetic coupling increase rapidly with increasing isotropic strain from $-$5\% to 5\% for VX2 monolayers. It is proposed that the strain-dependent magnetic moment is related to the strong ionic--covalent bonds, while both the ferromagnetism and the variation in strength of magnetic coupling with strain arise from the combined effects of both through-bond and through-space interactions. These findings suggest a new route to facilitate the design of nanoelectronic devices for complementing graphene.},
 number = {2},
 urldate = {2020-05-05},
 journal = {ACS Nano},
 month = jan,
 year = {2012},
 pages = {1695-1701},
 source = {Crossref},
 publisher = {American Chemical Society (ACS)},
}

@article{zhang_direct_2013,
 author = {Zhang, Yi and Chang, Tay-Rong and Zhou, Bo and Cui, Yong-Tao and Yan, Hao and Liu, Zhongkai and Schmitt, Felix and Lee, James and Moore, Rob and Chen, Yulin and Lin, Hsin and Jeng, Horng-Tay and Mo, Sung-Kwan and Hussain, Zahid and Bansil, Arun and Shen, Zhi-Xun},
 title = {Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial {MoSe2}},
 volume = {9},
 doi = {10.1038/nnano.2013.277},
 abstract = {Quantum systems in confined geometries are host to novel physical phenomena. Examples include quantum Hall systems in semiconductors and Dirac electrons in graphene. Interest in such systems has also been intensified by the recent discovery of a large enhancement in photoluminescence quantum efficiency and a potential route to valleytronics in atomically thin layers of transition metal dichalcogenides, MX2 (M = Mo, W; X = S, Se, Te), which are closely related to the indirect-to-direct bandgap transition in monolayers. Here, we report the first direct observation of the transition from indirect to direct bandgap in monolayer samples by using angle-resolved photoemission spectroscopy on high-quality thin films of MoSe2 with variable thickness, grown by molecular beam epitaxy. The band structure measured experimentally indicates a stronger tendency of monolayer MoSe2 towards a direct bandgap, as well as a larger gap size, than theoretically predicted. Moreover, our finding of a significant spin-splitting of $\sim$180 meV at the valence band maximum of a monolayer MoSe2 film could expand its possible application to spintronic devices.},
 journal = {Nat. Nanotechnol.},
 month = dec,
 year = {2013},
 number = {2},
 pages = {111-115},
 source = {Crossref},
 url = {https://doi.org/10.1038/nnano.2013.277},
 publisher = {Springer Science and Business Media LLC},
 issn = {1748-3387, 1748-3395},
}

@article{ugeda_characterization_2016,
 author = {Ugeda, Miguel M. and Bradley, Aaron J. and Zhang, Yi and Onishi, Seita and Chen, Yi and Ruan, Wei and Ojeda-Aristizabal, Claudia and Ryu, Hyejin and Edmonds, Mark T. and Tsai, Hsin-Zon and Riss, Alexander and Mo, Sung-Kwan and Lee, Dunghai and Zettl, Alex and Hussain, Zahid and Shen, Zhi-Xun and Crommie, Michael F.},
 title = {Characterization of collective ground states in single-layer {NbSe2}},
 volume = {12},
 issn = {1745-2473, 1745-2481},
 url = {https://doi.org/10.1038/nphys3527},
 doi = {10.1038/nphys3527},
 number = {1},
 urldate = {2020-05-05},
 journal = {Nat. Phys.},
 month = nov,
 year = {2015},
 pages = {92-97},
 source = {Crossref},
 publisher = {Springer Science and Business Media LLC},
}

@article{wang_electronics_2012,
 author = {Wang, Qing Hua and Kalantar-Zadeh, Kourosh and Kis, Andras and Coleman, Jonathan N. and Strano, Michael S.},
 title = {Electronics and optoelectronics of two-dimensional transition metal dichalcogenides},
 volume = {7},
 copyright = {2012 Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved.},
 issn = {1748-3387, 1748-3395},
 url = {https://doi.org/10.1038/nnano.2012.193},
 doi = {10.1038/nnano.2012.193},
 abstract = {Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.},
 number = {11},
 urldate = {2020-05-05},
 journal = {Nat. Nanotechnol.},
 month = nov,
 year = {2012},
 pages = {699-712},
 source = {Crossref},
 publisher = {Springer Science and Business Media LLC},
}

@article{wang_electronics_2012-1,
 author = {Wang, Qing Hua and Kalantar-Zadeh, Kourosh and Kis, Andras and Coleman, Jonathan N. and Strano, Michael S.},
 title = {Electronics and optoelectronics of two-dimensional transition metal dichalcogenides},
 volume = {7},
 issn = {1748-3387, 1748-3395},
 url = {https://doi.org/10.1038/nnano.2012.193},
 doi = {10.1038/nnano.2012.193},
 number = {11},
 urldate = {2020-05-05},
 journal = {Nat. Nanotechnol.},
 month = nov,
 year = {2012},
 pages = {699-712},
 source = {Crossref},
 publisher = {Springer Science and Business Media LLC},
}

@article{chhowalla_chemistry_2013,
 author = {Chhowalla, Manish and Shin, Hyeon Suk and Eda, Goki and Li, Lain-Jong and Loh, Kian Ping and Zhang, Hua},
 title = {The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets},
 volume = {5},
 copyright = {2013 Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved.},
 issn = {1755-4330, 1755-4349},
 url = {https://doi.org/10.1038/nchem.1589},
 doi = {10.1038/nchem.1589},
 abstract = {Two-dimensional materials have recently garnered much interest in the scientific and technology communities. This Review describes how ultrathin transition metal dichalcogenides combine tunable structure and electronic properties, achieved through altering their composition, with versatile chemistry. This makes them attractive in various fields, for example as lithium-ion battery electrodes and electrocatalysts for the hydrogen evolution reaction.},
 number = {4},
 urldate = {2020-05-05},
 journal = {Nature Chem},
 month = mar,
 year = {2013},
 pages = {263-275},
 source = {Crossref},
 publisher = {Springer Science and Business Media LLC},
}

@article{yang_long-lived_2015,
 author = {Yang, Luyi and Sinitsyn, Nikolai A. and Chen, Weibing and Yuan, Jiangtan and Zhang, Jing and Lou, Jun and Crooker, Scott A.},
 title = {Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer {MoS2} {and~WS2}},
 volume = {11},
 copyright = {2015 Nature Publishing Group},
 issn = {1745-2473, 1745-2481},
 url = {https://doi.org/10.1038/nphys3419},
 doi = {10.1038/nphys3419},
 abstract = {A range of semiconductors can host both spin and valley polarizations. Optical experiments on single layers of transition metal dichalcogenides now show that inter-valley scattering can accelerate spin relaxation.},
 number = {10},
 urldate = {2020-05-05},
 journal = {Nat. Phys.},
 month = aug,
 year = {2015},
 pages = {830-834},
 source = {Crossref},
 publisher = {Springer Science and Business Media LLC},
}

@article{zhang_van_2019,
 author = {Zhang, Wen and Wong, Ping Kwan Johnny and Zhu, Rui and Wee, Andrew T.S.},
 title = {Van der {Waals} magnets: {Wonder} building blocks for two-dimensional spintronics?},
 volume = {1},
 issn = {2567-3165, 2567-3165},
 url = {https://doi.org/10.1002/inf2.12048},
 doi = {10.1002/inf2.12048},
 abstract = {The unprecedented realization of two-dimensional (2D) van der Waals magnets excitingly extends the synergy between spintronics and 2D materials, started with graphene over the last decade. This article reviews the recent milestones in the development of 2D magnets and its derived heterostructures. In particular, a number of critical challenges centered around the scalability, ambient stability and Curie temperature of these atomically thin magnets are discussed. This mini-review also provides an outlook on what the future might hold for this integrated field of 2D spintronics, and assesses its potential in postsilicon electronics.},
 number = {4},
 urldate = {2020-05-05},
 journal = {InfoMat},
 year = {2019},
 keywords = {spintronics, transition-metal chalcogenide, two-dimensional material, van der Waals magnets},
 pages = {479-495},
 source = {Crossref},
 publisher = {Wiley},
 month = nov,
}

@article{mermin_absence_1966,
 author = {Mermin, N.D. and Wagner, H.},
 title = {Absence of Ferromagnetism or Antiferromagnetism in One- or Two-Dimensional Isotropic {Heisenberg} Models},
 volume = {17},
 url = {https://doi.org/10.1103/physrevlett.17.1133},
 doi = {10.1103/physrevlett.17.1133},
 abstract = {It is rigorously proved that at any nonzero temperature, a one- or two-dimensional isotropic spin-S Heisenberg model with finite-range exchange interaction can be neither ferromagnetic nor antiferromagnetic. The method of proof is capable of excluding a variety of types of ordering in one and two dimensions., This article appears in the following collection:},
 number = {22},
 urldate = {2020-05-05},
 journal = {Phys. Rev. Lett.},
 month = nov,
 year = {1966},
 pages = {1133-1136},
 source = {Crossref},
 publisher = {American Physical Society (APS)},
 issn = {0031-9007},
}

@article{sethulakshmi_magnetism_2019,
 author = {Sethulakshmi, N. and Mishra, Avanish and Ajayan, P.M. and Kawazoe, Yoshiyuki and Roy, Ajit K. and Singh, Abhishek K. and Tiwary, Chandra Sekhar},
 title = {Magnetism in two-dimensional materials beyond graphene},
 volume = {27},
 issn = {1369-7021},
 url = {https://doi.org/10.1016/j.mattod.2019.03.015},
 doi = {10.1016/j.mattod.2019.03.015},
 abstract = {Magnetic materials enjoy an envious position in the area of data storage, electronics, and even in biomedical field. This review provides an overview of low-dimensional magnetism in graphene, h-BN, and carbon nitrides, which originates from defects like vacancy, adatom, doping, and dangling bonds. In transition metal dichalcogenides, a tunable magnetism comes from doping, strain, and vacancy/defects, and these materials offer spintronics, as well as photoelectronic potentials, since they have an additional degree of freedom called valley state (e.g. MoS2). Strain- and layer-dependent magnetic ordering has been observed in layered compounds like CrXTe3, CrI3, and trisulfides. The magnetism in 2D oxides like MoO3, Ni(OH)2,and perovskites are also interesting as they are potential candidates for next-generation devices having faster processing and large data storage capacity. Quasi 2D magnetism in MXene and in atomically thin materials supported on 3D materials will also be discussed. Finally, some of the challenges related to the control of defects and imperfections in 2D lattice, promising approaches to overcome them will be covered.},
 urldate = {2020-05-05},
 journal = {Mater. Today},
 month = jul,
 year = {2019},
 pages = {107-122},
 source = {Crossref},
 publisher = {Elsevier BV},
}